SIR414DP Vishay, SIR414DP Datasheet - Page 4

• Manufacturer Part Number: SIR414DP
• Description: N-channel 40-v D-s Mosfet
• Manufacturer: Vishay

SiR414DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
0.1
2.1
1.7
1.3
0.9
0.5
10
1
- 50
0
Source-Drain Diode Forward Voltage
- 25
0.2
V
T
SD
J
0
= 150 °C
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
J
25
- Temperature (°C)
0.6
50
75
T
0.8
J
= 25 °C
0.01
100
0.1
Limited by R
10
100
1
0.01
I
D
= 250 µA
1.0
Safe Operating Area, Junction-to-Ambient
* V
Single Pulse
125
T
GS
A
= 25 °C
New Product
DS(on)
> minimum V
V
1.2
150
0.1
DS
*
- Drain-to-Source Voltage (V)
GS
at which R
1
BVDSS Limited
0.012
0.009
0.006
0.003
0.000
DS(on)
200
160
120
80
40
0
0
10
0 .
0
0
is specified
1
Single Pulse Power, Junction-to-Ambient
On-Resistance vs. Gate-to-Source Voltage
10 ms
100 ms
1 s
10 s
DC
100 µs
1 ms
2
V
0.01
GS
100
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
S09-0319-Rev. A, 02-Mar-09
Document Number: 64727
6
T
T
1
J
J
= 25 °C
= 125 °C
8
10
1
0