SIR416DP Vishay, SIR416DP Datasheet

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SIR416DP

Manufacturer Part Number
SIR416DP
Description
N-channel 40-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Manufacturer
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Price
Part Number:
SIR416DP-T1-GE3
Manufacturer:
VISHAY
Quantity:
12 000
Part Number:
SIR416DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SIR416DP-T1-GE3
Quantity:
906
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Part Number:
SIR416DP-T1-GE3
Quantity:
70 000
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 65 °C/W.
e. Package limited.
f. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
g. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 64985
S09-1001-Rev. A, 01-Jun-09
Ordering Information: SiR416DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
PRODUCT SUMMARY
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
V
DS
40
(V)
8
6.15 mm
D
7
C
D
= 25 °C.
0.0042 at V
0.0038 at V
6
D
PowerPAK SO-8
Bottom View
5
R
D
DS(on)
GS
GS
J
1
(Ω)
= 150 °C)
= 4.5 V
S
= 10 V
b, d
2
S
N-Channel 40-V (D-S) MOSFET
3
S
5.15 mm
4
I
D
G
(A)
50
50
Steady State
a, e
f, g
t ≤ 10 s
T
T
T
L = 0.1 mH
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
Q
28.2 nC
g
(Typ.)
New Product
Symbol
R
R
thJA
thJC
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
GS
DS
AS
D
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
• POL
• Synchronous Rectification
Definition
Typical
1.2
19
g
and UIS Tested
®
Power MOSFET
- 55 to 150
27.5
21.9
4.7
5.2
3.3
Limit
± 20
44.4
260
50
50
50
40
70
40
80
69
b, c
b, c
b, c
e
e
b, c
b, c
e
Maximum
G
1.8
24
N-Channel MOSFET
Vishay Siliconix
SiR416DP
D
S
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SIR416DP Summary of contents

Page 1

... Bottom View Ordering Information: SiR416DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy ...

Page 2

... SiR416DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Gate Charge Document Number: 64985 S09-1001-Rev. A, 01-Jun-09 New Product 10 1.5 2.0 2.5 4500 3600 2700 1800 900 2.0 1.7 1 1.1 0.8 0 SiR416DP Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C ...

Page 4

... SiR416DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.5 0.2 - 0 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.020 0.016 °C J 0.012 0.008 0.004 0.000 0.8 1.0 1.2 200 ...

Page 5

... T - Case Temperature (°C) C Current Derating* 2.5 2.0 1.5 1.0 0.5 0.0 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SiR416DP Vishay Siliconix 125 150 100 125 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www.vishay.com 150 5 ...

Page 6

... SiR416DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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