SIR416DP Vishay, SIR416DP Datasheet - Page 3

• Manufacturer Part Number: SIR416DP
• Description: N-channel 40-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 64985
S09-1001-Rev. A, 01-Jun-09
0.0050
0.0045
0.0040
0.0035
0.0030
0.0025
10
70
56
42
28
14
8
6
4
2
0
On-Resistance vs. Drain Current and Gate Voltage
0
0.0
0
0
I
D
V
= 10 A
DS
13
0.5
14
V
= 10 V
DS
Q
V
V
Output Characteristics
GS
g
GS
V
- Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
DS
V
= 4.5 V
= 10 V
I
D
GS
26
Gate Charge
= 20 V
1.0
- Drain Current (A)
28
= 10 V thru 3 V
39
1.5
42
V
DS
= 30 V
52
2.0
56
New Product
65
2.5
70
4500
3600
2700
1800
2.0
1.7
1.4
1.1
0.8
0.5
900
10
8
6
4
2
0
- 50
0
0
0
I
C
D
T
rss
On-Resistance vs. Junction Temperature
= 15 A
- 25
C
= 125 °C
T
C
1
= 25 °C
V
8
V
GS
0
T
Transfer Characteristics
DS
J
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
25
Capacitance
2
16
50
V
C
T
C
GS
C
oss
iss
Vishay Siliconix
= - 55 °C
= 10 V
3
24
75
SiR416DP
100
V
www.vishay.com
GS
4
32
= 4.5 V
125
150
5
40
3