FQU3N60 Fairchild Semiconductor, FQU3N60 Datasheet - Page 3

• Manufacturer Part Number: FQU3N60
• Description: 600v N-channel Mosfet
• Manufacturer: Fairchild Semiconductor

©2000 Fairchild Semiconductor International
Typical Characteristics
600
500
400
300
200
100
10
10
10
12
10
0
-1
-2
10
0
8
6
4
2
0
10
0
-1
-1
Figure 5. Capacitance Characteristics
Top :
Bottom : 5.5 V
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
V
1
GS
V
V
2
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
10
10
D
, Drain Current [A]
0
0
3
C
C
C
oss
iss
rss
V
4
GS
= 20V
V
C
C
C
GS
iss
oss
rss

Notes :
5
= C
= C
= C
= 10V
10
10
1. 250  s Pulse Test
2. T

Note : T
gs
gd
ds
1
1
C
+ C
+ C
= 25 

Notes :
gd
gd
1. V
2. f = 1 MHz
(C
ds
GS
6
J
= shorted)
= 25 
= 0 V
7
10
10
10
10
12
10
-1
-1
0
0
0.2
8
6
4
2
0
2
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
0.4
Variation vs. Source Current
150

2
4
0.6
25

V
V
Q
GS
SD
and Temperature
G
150

, Source-Drain Voltage [V]
, Gate-Source Voltage [V]
, Total Gate Charge [nC]
25

4
0.8
V
V
DS
V
DS
6
DS
= 480V
= 300V
= 120V
1.0
6
-55


Notes :

Notes :
1.2
1. V
2. 250  s Pulse Test
1. V
2. 250  s Pulse Test

Note : I
8
DS
GS
= 50V
= 0V
8
D
1.4
= 3.0 A
Rev. A, April 2000
1.6
10
10