FQU3N60 Fairchild Semiconductor, FQU3N60 Datasheet - Page 4

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FQU3N60

Manufacturer Part Number
FQU3N60
Description
600v N-channel Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet

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©2000 Fairchild Semiconductor International
Typical Characteristics
1.2
1.1
1.0
0.9
0.8
10
10
10
10
-100
Figure 9. Maximum Safe Operating Area
-1
-2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
T
V
vs. Temperature
J
DS
, Junction Temperature [
0
, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
1 0
1 0
1 0
 Notes :
- 1
- 2
1. T
2. T
3. Single Pulse
1 0
0
C
J
- 5
= 25
= 150
0 .0 5
0 .0 1
D = 0 . 5
0 .0 2
50
0 .2
0 .1
DS(on)
o
C
o
C
DC
Figure 11. Transient Thermal Response Curve
10 ms
100
1 0
(Continued)
o
C]
- 4
s in g le p u ls e
1 ms
 Notes :
t
1. V
2. I
1
D
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
G S
= 250  A
100 s
150
= 0 V
10 s
1 0
- 3
200
1 0
- 2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
25
Figure 8. On-Resistance Variation
 N o te s :
1 0
Figure 10. Maximum Drain Current
1 . Z
2 . D u ty F a c t o r , D = t
3 . T
- 1
P
-50
DM
 J C
J M
50
- T
( t ) = 2 . 5  /W M a x .
vs. Case Temperature
C
= P
T
vs. Temperature
J
T
t
, Junction Temperature [
1
C
0
t
D M
, Case Temperature [  ]
1 0
2
* Z
0
75
1
 J C
/t
2
( t )
50
100
1 0
1
100
o
C]
125
 Notes :
1. V
2. I
150
D
GS
= 1.5 A
= 10 V
Rev. A, April 2000
150
200

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