FQB7N65C Fairchild Semiconductor, FQB7N65C Datasheet
FQB7N65C
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FQB7N65C Summary of contents
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... Thermal Resistance, Junction-to-Case θJC R Thermal Resistance, Junction-to-Ambient θJA ©2006 Fairchild Semiconductor Corporation FQB7N65C Rev. A Description = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...
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... DD G ≤ 7A, di/dt ≤200A/µs, V ≤ Starting DSS, 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ Essentially independent of operating temperature FQB7N65C Rev. A Package Reel Size D2-PAK 330mm T = 25°C unless otherwise noted C Test Conditions = 250 µ ...
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... Figure 5. Capacitance Characteristics 2000 1600 C iss 1200 C oss 800 C 400 rss Drain-Source Voltage [V] DS FQB7N65C Rev. A Figure 2. Transfer Characteristics Notes : ※ 1. 250µs Pulse Test ℃ Figure 4. Body Diode Forward Voltage 1 10 ...
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... Figure 9. Maximum Safe Operating Area Operation in This Area is Limited by R DS(on Drain-SourceVoltage[V] DS Figure 11. Transient Thermal Response Curve FQB7N65C Rev. A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 ※ Notes : 0 250 µA D 0.0 -100 100 150 200 ...
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... Unclamped Inductive Switching Test Circuit & Waveforms FQB7N65C Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...
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... FQB7N65C Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...
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... Mechanical Dimensions 9.90 ±0.10 1.27 2.54 TYP 10.00 FQB7N65C Rev -PAK ±0.20 ±0.10 0.80 2.54 TYP ±0.20 7 ±0.20 4.50 +0.10 1.30 –0.05 ±0.15 0.10 ±0.20 2.40 +0.10 0.50 –0.05 ±0.20 10.00 (8.00) (4.40) (2XR0.45) ±0.10 0.80 Dimensions in Millimeters www.fairchildsemi.com ...
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... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FQB7N65C Rev. A OCX™ OCXPro™ ® OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ ...