FQB7N65C Fairchild Semiconductor, FQB7N65C Datasheet - Page 4

• Manufacturer Part Number: FQB7N65C
• Description: Fqb7n65c 650v N-channel Mosfet
• Manufacturer: Fairchild Semiconductor

FQB7N65C Rev. A
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
Figure 11. Transient Thermal Response Curve
10
10
10
10
10
1.2
1.1
1.0
0.9
0.8
-1
-2
2
1
0
10
-100
0
vs. Temperature
Operation in This Area
is Limited by R
-50
T
V
J
DS(on)
DS
, Junction Temperature [
10
0
, Drain-SourceVoltage[V]
1
50
10
10
10
-1
-2
0
10
-5
DC
D=0.5
0.01
0.02
0.05
0.2
0.1
100
* Notes :
10
100ms
1. T
2. T
3. Single Pulse
o
2
C]
C
J
10ms
= 150
= 25
10
※
1. V
2. I
-4
1ms
Notes :
single pulse
o
C
o
D
C
t
150
G S
1
= 250 µA
, Square Wave Pulse Duration [sec]
100
= 0 V
µ
10
s
10
µ
-3
(Continued)
s
200
10
3
4
10
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
-2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
8
6
4
2
0
-100
25
* Notes :
1. Z
2. Duty Factor, D=t
3. T
10
-1
P
θ
JM
JC
DM
(t) = 0.75
- T
vs. Temperature
C
vs. Case Temperature
= P
-50
t
DM
50
1
0
t
10
2
C/W Max.
* Z
1
0
/t
? JC
2
(t)
T
T
J
, Junction Temperature [
C
0
, Case Temperature [
75
10
1
50
100
100
o
o
C]
C]
※
1. V
2. I
125
Notes :
150
D
www.fairchildsemi.com
GS
= 3.5 A
= 10 V
200
150