SIE854DF Vishay, SIE854DF Datasheet

no-image

SIE854DF

Manufacturer Part Number
SIE854DF
Description
N-channel 100-v D-s Mosfet
Manufacturer
Vishay
Datasheet
Document Number: 69824
S-72679-Rev. A, 24-Dec-07
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (http://www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Package Drawing
http://www.vishay.com/doc?72945
Top surface is connected to pins 1, 5, 6, and 10
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
V
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
DS
100
10
D
1
D
(V)
Ordering Information: SiE854DF-T1-E3 (Lead (Pb)-free)
G
G
2
9
0.0142 at V
S
Top View
3
S
8
D
r
DS(on)
S
4
S
7
GS
(Ω)
= 10 V
D
D
5
6
J
PolarPAK
= 150 °C)
Silicon
Limit
N-Channel 100-V (D-S) MOSFET
64
6
D
5
I
D
(A)
Package
7
Bottom View
4
Limit
60
S
a
d, e
T
T
T
T
T
T
L = 0.1 mH
T
T
T
T
8
C
C
C
C
C
A
A
A
A
A
3
A
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
Q
G
9
2
g
50 nC
(Typ.)
New Product
10
D
1
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
D
AS
S
D
FEATURES
APPLICATIONS
stg
• TrenchFET
• Ultra Low Thermal Resistance Using
• Leadframe-Based New Encapsulated Package
• Low Q
• Primary Side Switch
• Half-Bridge
Top-Exposed PolarPAK
Double-Sided Cooling
- Die Not Exposed
- Same Layout Regardless of Die Size
100 % R
gd
/Q
g
and UIS Tested
gs
®
Power MOSFET
Ratio Helps Prevent Shoot-Through
60
http://www.vishay.com/ppg?69824
G
64 (Silicon Limit)
a
For Related Documents
(Package Limit)
N-Channel MOSFET
- 50 to 150
13.2
10.5
4.3
5.2
3.3
Limit
± 20
100
125
60
260
52
60
40
80
80
b, c
b, c
b, c
b, c
b, c
a
®
Package for
D
S
Vishay Siliconix
SiE854DF
www.vishay.com
Unit
RoHS
COMPLIANT
mJ
°C
W
V
A
1

Related parts for SIE854DF

SIE854DF Summary of contents

Page 1

... Top View Top surface is connected to pins and 10 Ordering Information: SiE854DF-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current ...

Page 2

... SiE854DF Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain Top Maximum Junction-to-Case (Source) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 68 °C/W. c. Measured at source pin (on the side of the package). ...

Page 3

... S-72679-Rev. A, 24-Dec-07 New Product = 10 thru 1.2 1.6 2.0 4000 3200 2400 1600 SiE854DF Vishay Siliconix ° ° 125 ° Gate-to-Source Voltage (V) GS Transfer Characteristics ...

Page 4

... SiE854DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 4.0 3.5 3.0 2.5 2.0 1 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.030 0.025 0.020 °C J 0.015 0.010 0.005 0 0.8 1.0 1.2 50 ...

Page 5

... Document Number: 69824 S-72679-Rev. A, 24-Dec-07 New Product 140 120 100 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SiE854DF Vishay Siliconix 100 125 T - Case Temperature (°C) C Power Derating, Junction-to-Case www.vishay.com 150 5 ...

Page 6

... SiE854DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

Related keywords