SIE854DF Vishay, SIE854DF Datasheet - Page 4

• Manufacturer Part Number: SIE854DF
• Description: N-channel 100-v D-s Mosfet
• Manufacturer: Vishay

SiE854DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
4.0
3.5
3.0
2.5
2.0
1.5
100
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
Threshold Voltage
T
- Source-to-Drain Voltage (V)
0.4
J
T
- Temperature (°C)
J
25
= 150 °C
0.6
50
75
0.01
100
0.1
0.8
10
0.01
1
I
D
100
= 250 µA
T
Safe Operating Area, Junction-to-Ambient
* V
J
= 25 °C
Limited by r
1.0
GS
125
> minimum V
V
Single Pulse
T
DS
0.1
New Product
A
150
= 25 °C
1.2
- Drain-to-Source Voltage (V)
DS(on)
GS
*
at which r
1
DS(on)
0.030
0.025
0.020
0.015
0.010
0.005
10
50
40
30
20
10
0
BVDSS
0
0.01
is specified
4
I
On-Resistance vs. Gate-to-Source Voltage
D
Single Pulse Power, Junction-to-Ambient
= 13.2 A
5
0.1
100
100 us
1 ms
10 ms
100 ms
1 s
10 s
DC
V
GS
- Gate-to-Source Voltage (V)
6
1
Time (s)
7
S-72679-Rev. A, 24-Dec-07
Document Number: 69824
10
8
T
T
100
A
A
= 125 °C
= 25 °C
9
1000
10