SIE802DF Vishay, SIE802DF Datasheet - Page 3

• Manufacturer Part Number: SIE802DF
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless noted
Document Number: 72985
S-60784-Rev. D, 08-May-06
0.0025
0.0023
0.0021
0.0019
0.0017
0.0015
100
80
60
40
20
10
On-Resistance vs. Drain Current and Gate Voltage
0
8
6
4
2
0
0.0
0
0
I
D
V
20
= 23.6 A
GS
20
V
DS
Output Characteristics
0.1
= 4.5 V
Q
g
– Drain-to-Source Voltage (V)
V
I
DS
D
40
– Total Gate Charge (nC)
V
GS
Gate Charge
– Drain Current (A)
= 15 V
40
V
= 10 V
GS
0.2
= 10 thru 4 V
60
V
60
DS
80
= 24 V
0.3
80
100
3 V
120
0.4
100
10000
8000
6000
4000
2000
1.6
1.4
1.2
1.0
0.8
0.6
20
16
12
8
4
0
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
V
I
C
D
GS
- 25
rss
0.5
= 23.6 A
= 4.5 V, 10 V
5
V
V
GS
DS
T
Transfer Characteristics
J
0
1.0
– Junction Temperature (°C)
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
10
25
Capacitance
T
1.5
C
C
25 °C
oss
= 125 °C
50
15
Vishay Siliconix
2.0
75
C
20
SiE802DF
iss
2.5
100
www.vishay.com
25
3.0
- 55 °C
125
3.5
150
30
3