SIE802DF Vishay, SIE802DF Datasheet - Page 4

• Manufacturer Part Number: SIE802DF
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

SiE802DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless noted
www.vishay.com
4
100
10
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1
0.00
- 50
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
T
0
J
– Source-to-Drain Voltage (V)
Threshold Voltage
= 150 °C
T
J
– Temperature (°C)
25
0.4
50
I
D
0.6
= 250 µA
75
by r
*Limited
1000
0.01
100
0.1
DS(on)
10
1
100
0.1
T
J
0.8
Safe Operating Area, Junction-to-Ambient
= 25 °C
*V
GS
125
V
minimum V
DS
150
1.0
– Drain-to-Source Voltage (V)
1
Single Pulse
T
A
= 25 °C
GS
at which r
DS(on)
10
0.0040
0.0035
0.0030
0.0025
0.0020
0.0015
0.0010
50
40
30
20
10
0
0.01
is specified
0
Single Pulse Power, Junction-to-Ambient
On-Resistance vs. Gate-to-Source Voltage
dc
10 s
10 ms
100 ms
1 s
1 ms
0.1
100
2
V
GS
– Gate-to-Source Voltage (V)
Time (sec)
1
4
S-60784-Rev. D, 08-May-06
Document Number: 72985
10
6
I
D
T
T
= 23.6 A
100
A
A
= 125 °C
8
= 25 °C
1000
10