SIE850DF Vishay, SIE850DF Datasheet

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SIE850DF

Manufacturer Part Number
SIE850DF
Description
N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet
Document Number: 73987
S-72511-Rev. A, 03-Dec-07
Notes:
a. Package limited is 60 A.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (http://www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Package Drawing
http://www.vishay.com/doc?72945
Top surface is connected to pins 1, 5, 6, and 10
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
V
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
DS
30
10
D
1
D
(V)
Ordering Information: SiE850DF-T1-E3 (Lead (Pb)-free)
G
G
2
9
0.0025 at V
0.0029 at V
S
Top View
3
S
8
D
r
DS(on)
S
4
S
7
GS
GS
(Ω)
= 4.5 V
= 10 V
e
D
D
5
6
J
PolarPAK
= 150 °C)
Silicon
Limit
164
152
N-Channel 30-V (D-S) MOSFET
6
D
5
I
D
(A)
7
Bottom View
Package
4
Limit
S
60
60
a
a
d, e
T
T
T
T
T
T
L = 0.1 mH
T
T
T
T
8
C
C
C
C
C
A
A
A
A
A
3
A
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
Q
G
9
2
55 nC
g
(Typ)
New Product
10
D
1
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
D
AS
S
D
FEATURES
APPLICATIONS
stg
• TrenchFET
• Ultra Low Thermal Resistance Using
• Leadframe-Based New Encapsulated Package
• Low Q
• 100 % R
• VRM, POL
• DC/DC Conversion
• Server
Top-Exposed PolarPAK
Double-Sided Cooling
- Die Not Exposed
- Same Layout Regardless of Die Size
gd
/Q
g
and UIS Tested
gs
®
Gen II Power MOSFET
Ratio Helps Prevent Shoot-Through
60
http://www.vishay.com/ppg?73987
157 (Silicon Limit)
G
a
For Related Documents
(Package Limit)
- 50 to 150
N-Channel MOSFET
4.3
5.2
3.3
Limit
35
28
± 12
125
104
60
60
260
30
80
50
66
b, c
b, c
b, c
b, c
b, c
a
a
®
Package for
D
S
Vishay Siliconix
SiE850DF
www.vishay.com
Unit
RoHS
COMPLIANT
mJ
°C
W
V
A
1

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SIE850DF Summary of contents

Page 1

... Top View Top surface is connected to pins and 10 Ordering Information: SiE850DF-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current ...

Page 2

... SiE850DF Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain Top Maximum Junction-to-Case (Source) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 68 °C/W. c. Measured at source pin (on the side of the package). ...

Page 3

... V 0 0.8 1.0 10000 8000 6000 4000 2000 1.8 1.6 1 1.2 DS 1.0 0.8 0.6 80 100 120 - 50 SiE850DF Vishay Siliconix ° 125 ° °C C 0.0 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss ...

Page 4

... SiE850DF Vishay Siliconix TYPICAL CHARACTERISTICS 100 T = 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 1.6 1 250 µA D 1.2 1.0 0.8 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 25 °C, unless otherwise noted 0.006 0.005 0.004 0.003 °C J 0.002 ...

Page 5

... S-72511-Rev. A, 03-Dec-07 New Product 25 °C, unless otherwise noted 120 100 125 150 25 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SiE850DF Vishay Siliconix 50 75 100 125 150 T - Case Temperature (°C) C Power Derating, Junction-to-Case www.vishay.com 5 ...

Page 6

... SiE850DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top) 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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