SIE850DF Vishay, SIE850DF Datasheet - Page 4

• Manufacturer Part Number: SIE850DF
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

SiE850DF
Vishay Siliconix
TYPICAL CHARACTERISTICS
www.vishay.com
4
100
1.6
1.4
1.2
1.0
0.8
0.6
10
1
- 50
0.0
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
0
T
- Source-to-Drain Voltage (V)
Threshold Voltage
T
J
J
= 150 °C
25
- Temperature (°C)
0.4
I
D
50
= 250 µA
0.6
75
0.01
Limited by r
100
0.1
10
100
0.01
1
T
J
0.8
Safe Operating Area, Junction-to-Ambient
= 25 °C
* V
25 °C, unless otherwise noted
125
GS
DS(on)
> minimum V
V
New Product
Single Pulse
1.0
0.1
150
DS
T
*
A
- Drain-to-Source Voltage (V)
= 25 °C
GS
at which r
1
BVDSS
DS(on)
0.006
0.005
0.004
0.003
0.002
10
50
40
30
20
10
0
0.01
is specified
0
Single Pulse Power, Junction-to-Ambient
On-Resistance vs. Gate-to-Source Voltage
1 s
10 ms
100 ms
10 s
DC
1 ms
0.1
2
100
V
GS
- Gate-to-Source Voltage (V)
1
4
Time (s)
S-72511-Rev. A, 03-Dec-07
Document Number: 73987
10
6
I
D
T
A
T
= 20.8 A
100
A
= 125 °C
8
= 25 °C
1000
10