SIE832DF Vishay, SIE832DF Datasheet - Page 3

• Manufacturer Part Number: SIE832DF
• Description: N-channel 40-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 74414
S-71684-Rev. B, 13-Aug-07
0.006
0.003
0.008
0.007
0.005
0.004
80
60
40
20
10
0
8
6
4
2
0
0.0
0
0
I
D
On-Resistance vs. Drain Current
10
= 20 A
0.4
V
V
GS
Output Characteristics
DS
20
Q
= 4.5 V
g
- Drain-to-Source Voltage (V)
I
- Total Gate Charge (nC)
D
20
- Drain Current (A)
Gate Charge
0.8
V
V
DS
V
GS
GS
= 20 V
40
30
= 10 thru 4 V
= 10 V
1.2
40
V
DS
V
60
GS
= 32 V
1.6
= 3 V
50
New Product
2.0
80
60
4500
3600
2700
1800
900
1.8
1.6
1.4
1.2
1.0
0.8
0.6
20
16
12
8
4
0
0
- 50
1.5
0
On-Resistance vs. Junction Temperature
I
C
D
- 25
rss
= 14 A
2.0
T
8
C
V
T
Transfer Characteristics
V
GS
J
= 25 °C
DS
0
- Junction Temperature (°C)
T
- Gate-to-Source Voltage (V)
C
- Drain-to-Source Voltage (V)
= 125 °C
25
Capacitance
2.5
16
V
GS
C
C
50
iss
oss
= 10 V, 4.5 V
Vishay Siliconix
3.0
24
75
SiE832DF
100
www.vishay.com
T
3.5
C
32
= - 55 °C
125
4.0
150
40
3