SIE832DF Vishay, SIE832DF Datasheet - Page 4

• Manufacturer Part Number: SIE832DF
• Description: N-channel 40-v D-s Mosfet
• Manufacturer: Vishay

SiE832DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
10
1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
- 50
Source-Drain Diode Forward Voltage
- 25
V
SD
0
Threshold Voltage
T
- Source-to-Drain Voltage (V)
T
J
J
= 150 °C
- Temperature (°C)
I
25
D
= 250 µA
50
75
0.01
100
0.1
10
0.01
1
100
T
*Limited by r
Safe Operating Area, Junction-to-Ambient
J
*V
= 25 °C
GS
125
V
Single Pulse
0.1
minimum V
DS
T
A
New Product
DS(on)
150
- Drain-to-Source Voltage (V)
= 25 °C
GS
at which r
1
DS(on)
BVDSS
Limited
10
0.010
0.006
0.004
0.002
0.012
0.008
is specified
50
40
30
20
10
0
0.01
2
Single Pulse Power, Junction-to-Ambient
On-Resistance vs. Gate-to-Source Voltage
1 ms
100 ms
1 s
10 ms
10 s
DC
100
0.1
V
4
GS
- Gate-to-Source Voltage (V)
1
Time (sec)
T
A
= 25 °C
6
S-71684-Rev. B, 13-Aug-07
Document Number: 74414
10
T
I
A
D
= 125 °C
8
= 14 A
100
1000
10