SIE848DF Vishay, SIE848DF Datasheet

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SIE848DF

Manufacturer Part Number
SIE848DF
Description
N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIE848DF-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SIE848DF-T1-E3
Quantity:
70 000
Document Number: 68821
S-82581-Rev. A, 27-Oct-08
Notes:
a. Package limited is 60 A.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (http://www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Package Drawing
http://www.vishay.com/doc?72945
Top surface is connected to pins 1, 5, 6, and 10
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
V
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
DS
30
10
D
1
D
(V)
Ordering Information: SiE848DF-T1-E3 (Lead (Pb)-free)
G
G
2
9
0.0022 at V
0.0016 at V
S
Top View
3
8
S
D
R
DS(on)
S
4
7
S
GS
GS
(Ω)
= 4.5 V
= 10 V
e
D
5
D
6
J
PolarPAK
= 150 °C)
Silicon
Limit
N-Channel 30-V (D-S) MOSFET
211
180
6
D
5
I
D
(A)
7
Bottom View
4
Package
a
S
Limit
60
60
d, e
T
T
T
T
T
T
L = 0.1 mH
T
T
T
T
8
C
C
C
C
C
A
A
A
A
A
3
A
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
G
9
2
43 nC
New Product
Q
10
g
D
1
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
D
AS
S
D
FEATURES
APPLICATIONS
stg
• TrenchFET
• Ultra Low Thermal Resistance Using
• Leadframe-Based New Encapsulated Package
• Low Q
• 100 % R
• VRM
• DC/DC Conversion: Low-Side
• Synchronous Rectification
Top-Exposed PolarPAK
Double-Sided Cooling
- Die Not Exposed
- Same Layout Regardless of Die Size
gd
/Q
g
and UIS Tested
gs
®
Gen III Power MOSFET
Ratio Helps Prevent Shoot-Through
60
211 (Silicon Limit)
http://www.vishay.com/ppg?68821
G
a
For Related Documents
(Package Limit)
- 50 to 150
N-Channel MOSFET
4.3
5.2
3.3
Limit
43
34
± 20
100
125
125
60
60
260
30
50
80
b, c
b, c
b, c
b, c
b, c
a
a
®
Package for
D
S
Vishay Siliconix
SiE848DF
www.vishay.com
Unit
RoHS
COMPLIANT
mJ
°C
W
V
A
1

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SIE848DF Summary of contents

Page 1

... Top View Top surface is connected to pins and 10 Ordering Information: SiE848DF-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current ...

Page 2

... SiE848DF Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain Top Maximum Junction-to-Case (Source) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 68 °C/W. c. Measured at source pin (on the side of the package). ...

Page 3

... S-82581-Rev. A, 27-Oct-08 New Product 2.0 2.5 3.0 8000 7000 6000 5000 4000 3000 2000 1000 80 100 1.8 1.6 1.4 1 1.0 0.8 0.6 80 100 SiE848DF Vishay Siliconix ° ° 125 ° 0.0 0.5 1.0 1.5 2.0 2 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss ...

Page 4

... SiE848DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2.2 2.0 1 250 µA D 1.6 1.4 1.2 1.0 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.006 0.005 0.004 0.003 °C J 0.002 ...

Page 5

... S-82581-Rev. A, 27-Oct-08 New Product 140 120 100 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SiE848DF Vishay Siliconix 50 75 100 125 150 T - Case Temperature (°C) C Power Derating, Junction-to-Case www.vishay.com 5 ...

Page 6

... SiE848DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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