SIE848DF Vishay, SIE848DF Datasheet - Page 4

• Manufacturer Part Number: SIE848DF
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

SiE848DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
T
Threshold Voltage
- Source-to-Drain Voltage (V)
J
T
J
= 150 °C
25
- Temperature (°C)
0.4
I
D
= 250 µA
50
0.6
75
0.01
100
Limited by R
0.1
10
100
1
0.01
T
0.8
Safe Operating Area, Junction-to-Ambient
J
* V
= 25 °C
Single Pulse
125
T
GS
A
= 25 °C
DS(on)
> minimum V
V
New Product
150
DS
0.1
1.0
*
- Drain-to-Source Voltage (V)
GS
BVDSS Limited
at which R
1
DS(on)
0.006
0.005
0.004
0.003
0.002
0.001
10
50
40
30
20
10
0
0.01
is specified
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1 s
10 s
DC
0.1
100
2
V
GS
- Gate-to-Source Voltage (V)
1
4
Time (s)
S-82581-Rev. A, 27-Oct-08
Document Number: 68821
10
6
T
T
J
J
= 25 °C
100
= 125 °C
8
1000
10