BSH102 NXP Semiconductors, BSH102 Datasheet - Page 8

• Manufacturer Part Number: BSH102
• Description: N-channel Enhancement Mode Mos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
1997 Dec 08
handbook, halfpage
N-channel enhancement mode
MOS transistor
Fig.12 Temperature coefficient of gate-source
k
V
GSth
=
1.2
0.8
0.6
k
------------------------------------- -
V
1
at V
GSth
V
65
GSth
threshold voltage as a function of junction
temperature; typical values.
DS
at 25 C
at T
= V
GS
j
15
; I
D
= 1 mA.
35
85
135
T j ( C)
MGM208
185
8
handbook, halfpage
(1) R
(2) R
Fig.13 Temperature coefficient of drain-source
k
=
k
1.8
1.6
1.4
1.2
0.8
0.6
---------------------------------------- -
R
DSon
DSon
1
DSon
R
65
DSon
on-resistance as a function of junction
temperature; typical values.
at V
at V
at 25 C
at T
(1)
GS
GS
= 10 V; I
= 4.5 V; I
15
j
(2)
D
D
35
= 0.5 mA.
= 0.25 mA.
85
Product specification
135
T j ( C)
BSH102
MGM209
185