BSH299 NXP Semiconductors, BSH299 Datasheet - Page 3

• Manufacturer Part Number: BSH299
• Description: P-channel Enhancement Mode Mos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. T
2. Pulse width and duty cycle limited by maximum junction temperature.
3. Device mounted on a printed-circuit board with an R
4. Device mounted on a printed-circuit board with an R
THERMAL CHARACTERISTICS
1998 Feb 18
V
V
I
I
P
T
T
R
SYMBOL
SYMBOL
D
DM
stg
j
DS
GSO
tot
th j-s
P-channel enhancement mode MOS transistor
s
is the temperature at the soldering point of the drain lead.
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
operating junction temperature
thermal resistance from junction to soldering point; see Fig.4
PARAMETER
PARAMETER
open drain
T
T
T
T
note 2
th a-tp
th a-tp
s
s
amb
amb
= 80 C; see Fig.2
3
80 C; note 1
= 25 C; note 3; see Fig.2
= 25 C; note 4; see Fig.2
(ambient to tie-point) of 27.5 K/W.
(ambient to tie-point) of 90 K/W.
CONDITIONS
VALUE
55
55
100
MIN.
Objective specification
0.7
0.98
0.66
+150
150
50
20
0.2
0.8
MAX.
BSH299
UNIT
K/W
V
V
A
A
W
W
W
C
C
UNIT