BSN254 NXP Semiconductors, BSN254 Datasheet - Page 3

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BSN254

Manufacturer Part Number
BSN254
Description
N-channel Enhancement Mode Vertical D-mos Transistors
Manufacturer
NXP Semiconductors
Datasheet

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THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board; maximum lead length 4 mm; mounting pad for drain lead minimum
CHARACTERISTICS
T
2002 Feb 19
R
V
I
V
R
I
C
C
C
Switching times (see Figs 2 and 3)
t
t
j
GSS
DSS
on
off
(BR)DSS
GSth
Y
th j-a
= 25 C unless otherwise specified.
DSon
iss
oss
rss
N-channel enhancement mode
vertical D-MOS transistor
SYMBOL
SYMBOL
fs
10
10 mm.
drain-source breakdown voltage
gate-source leakage current
gate-source threshold voltage
drain-source on-state resistance
drain-source leakage current
transfer admittance
input capacitance
output capacitance
feedback capacitance
turn-on time
turn-off time
thermal resistance from junction to ambient; note 1
PARAMETER
PARAMETER
I
V
I
I
I
V
I
V
V
V
I
V
I
V
D
D
D
D
D
D
D
GS
DS
DS
DS
DS
GS
GS
= 10 A; V
= 1 mA; V
= 20 mA; V
= 300 mA; V
= 300 mA; V
= 250 mA; V
= 250 mA; V
3
= 200 V; V
= 25 V; V
= 25 V; V
= 25 V; V
= 20 V; V
= 0 to 10 V
= 10 to 0 V
CONDITIONS
DS
GS
GS
GS
GS
GS
GS
DS
DD
DD
DS
GS
= V
= 0
= 2.4 V
= 0; f = 1 MHz
= 0; f = 1 MHz
= 0; f = 1 MHz
= 0
= 10 V
= 25 V
= 50 V;
= 50 V;
= 0
GS
BSN254; BSN254A
250
0.8
200
MIN.
VALUE
125
2.8
600
100
21
10
6
47
Product specification
TYP. MAX. UNIT
2
7.5
5
1
120
30
15
10
60
100 nA
UNIT
K/W
V
V
mS
pF
pF
pF
ns
ns
A

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