RJK1535DPE Renesas Electronics Corporation., RJK1535DPE Datasheet - Page 2

• Manufacturer Part Number: RJK1535DPE
• Description: Silicon N Channel Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

RJK1535DPJ, RJK1535DPE, RJK1535DPF
Electrical Characteristics
Notes: 4. Pulse test
REJ03G0479-0300 Rev.3.00
Jun 30, 2010
Drain to Source breakdown voltage
Zero Gate voltage drain current
Gate to Source leak current
Gate to Source cutoff voltage
Forward transfer admittance
Static Drain to Source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate charge
Gate to Source charge
Gate to Drain charge
Body-Drain diode forward voltage
Body-Drain diode reverse recovery time
Body-Drain diode reverse recovery
charge
Item
Symbol
V
R
V
td(on)
td(off)
Coss
(BR)DSS
Crss
Ciss
|yfs|
Qgs
Qgd
I
I
V
GS(off)
Qrr
DS(on)
Qg
DSS
GSS
trr
tr
tf
DF
Min
150
3.0
13
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.045
1420
Typ
300
170
110
1.0
0.5
22
42
30
70
80
35
16
—
—
—
—
9
0.052
Max
±0.1
4.5
1.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1
Unit
A
A
nC
nC
nC
C
pF
pF
pF
ns
ns
ns
ns
ns

V
V
S
V
I
V
V
V
I
I
V
V
f = 1 MHz
I
V
R
Rg = 10 
V
V
I
I
I
diF/dt = 100 A/s
D
D
D
D
D
F
F
DS
GS
DS
DS
GS
GS
L
DD
GS
= 40 A, V
= 40 A, V
= 10 mA, V
= 20 A, V
= 20 A, V
= 20 A
= 40 A
= 3.75 
= 150 V, V
= 10 V, I
= 25 V
= 30 V, V
= 0
= 10 V
= 120 V
= 10 V
Test conditions
GS
GS
DS
GS
D
GS
= 0
= 0
= 1 mA
= 10 V
= 10 V
GS
DS
= 0
Preliminary
= 0
= 0
Note4
(Ta = 25°C)
Page 2 of 7
Note4
Note4