RJK1535DPE Renesas Electronics Corporation., RJK1535DPE Datasheet - Page 3

• Manufacturer Part Number: RJK1535DPE
• Description: Silicon N Channel Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

RJK1535DPJ, RJK1535DPE, RJK1535DPF
Main Characteristics
REJ03G0479-0300 Rev.3.00
Jun 30, 2010
160
120
80
40
50
40
30
20
10
8
6
4
2
0
0
0
10 V
Drain to Source Saturation Voltage vs.
Drain to Source Voltage
Gate to Source Voltage
Power vs. Temperature Derating
Typical Output Characteristics
Case Temperature
4
4
50
Gate to Source Voltage
8 V
8
8
7.5 V
100
12
12
Tc (°C)
Pulse Test
Pulse Test
150
V
V
I
D
DS
GS
16
16
= 40 A
20 A
10 A
6.5 V
(V)
(V)
7 V
6 V
200
20
20
1000
0.03
0.01
0.05
0.02
0.01
300
100
0.3
0.1
0.5
0.2
0.1
30
10
50
40
30
20
10
3
1
1
0
Static Drain to Source on State Resistance
1
1
Operation in this
area is limited by
R
V
V
Pulse Test
DS(on)
Drain to Source Voltage
GS
DS
Gate to Source Voltage
Typical Transfer Characteristics
Maximum Safe Operation Area
= 10 V
3
3
= 10 V
2
Tc = 75°C
Drain Current
vs. Drain Current
10
10
4
30
30
6
−25°C
25°C
100
I
100
D
Pulse Test
Ta = 25°C
V
(A)
V
DS
GS
300
300
8
Preliminary
(V)
Page 3 of 7
(V)
1000
1000
10