RTQ025P02 ROHM Co. Ltd., RTQ025P02 Datasheet - Page 2

• Manufacturer Part Number: RTQ025P02
• Description: 2.5v Drive Pch Mos Fet
• Manufacturer: ROHM Co. Ltd.

Transistor
Forward voltage
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Foward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Electrical characteristics (Ta=25°C)
Body diode characteristics (Source-drain) (Ta=25°C)
∗PULSED
Parameter
Parameter
V
Symbol
Symbol
R
V
(BR)DSS
V
t
t
Qgs
Qgd
I
C
I
C
C
GS(th)
DS(on)
d(on)
d(off)
Qg
GSS
Y
DSS
SD
t
t
oss
iss
rss
r
fs
f
∗
∗
∗
∗
∗
∗
Min.
−0.7
Min.
−20
2.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ.
Typ.
140
580
110
6.4
1.4
1.9
72
80
80
12
20
40
17
−
−
−
−
−
−
Max.
Max.
−1.2
−2.0
100
110
190
±10
−1
−
−
−
−
−
−
−
−
−
−
−
−
Unit
Unit
mΩ
mΩ
mΩ
µA
µA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
S
V
V
I
V
V
I
I
V
I
V
f = 1MHz
I
V
V
R
R
V
V
I
D
D
D
D
I
S
D
GS
DS
DS
DS
D
=− 1
=−2.5 A, V
=−2.5 A, V
DS
DD
GS
DD
GS
=−1.2 A, V
L
G
=−1 A, V
=− 1.2A
=− 2.5A
= 12.5Ω
= 10Ω
=− 20V, V
=− 10V, I
=−10 V, I
= ±12V, V
=− 10V, V
=−4.5 V
=−4.5 V
mA,
− 15V
− 15V
, V
GS
GS
Conditions
GS
Conditions
GS
GS
D
D
=0 V
GS
GS
DS
=− 1
=− 1.2A
= 0V
=−4.5 V
=−4 V
=−2.5 V
= 0V
= 0V
= 0V
mA
Rev.A
RTQ025P02
2/4