RTQ025P02 ROHM Co. Ltd., RTQ025P02 Datasheet - Page 3

• Manufacturer Part Number: RTQ025P02
• Description: 2.5v Drive Pch Mos Fet
• Manufacturer: ROHM Co. Ltd.

Transistor
Electrical characteristic curves
0.001
10000
0.01
1000
1000
0.1
100
10
100
10
10
1
0.01
Fig.1 Typical Transfer Characteristics
0.1
0
Ta=125°C
Ta=125°C
Fig.4 Static Drain−Source On−State
0.5
−25°C
−25°C
Fig.7 Typical Capactitance
75°C
25°C
75°C
25°C
vs.Drain−Source Voltage
Drain−Source Voltage : −V
Gate−Source Voltage : −V
Drain Current : −I
Resistance
1.0
0.1
1.5
2.0
1
1
vs.Drain−Current
2.5
D
[A]
3.0
10
DS
GS
V
pulsed
DS
[V]
V
pulsed
[V]
Ta=25 C
f=1MHz
V
3.5
GS
=−10V
GS
C
C
=−4V
oss
rss
=0V
C
iss
4.0
100
10
1000
1000
100
100
10
10
1000
0.01
100
1
0.1
10
Fig.2 Static Drain−Source On−State
0.1
V
Fig.5 Static Drain−Source On−State
Fig.8 Switching Characteristics
Ta=125°C
GS
−4.0V
−4.5V
=−4V
t
d(off)
−25°C
Resistance
75°C
25°C
Drain Current : −I
Resistance
Drain Current : −I
Drain Current : −I
0.1
t
f
t
r
vs.Drain Current
1
1
vs.Drain−Current
D
[A]
D
D
1
[A]
t
[A]
d(on)
Ta=25 C
V
V
R
pulsed
DD
GS
G
Ta=25 C
pulsed
V
pulsed
=10Ω
GS
=−15V
=−4.5V
=−2.5V
10
10
10
1000
0.01
100
0.1
10
8
7
6
5
4
3
2
1
0
10
1
0.1
0
0
Fig.3 Static Drain−Source On−State
Fig.9 Dynamic Input Characteristics
Ta=125
Ta=125°C
Fig.6 Reverse Drain Current vs.
-25
−25°C
75
25
75°C
25°C
1
Resistance
Source−Drain Voltage : −V
°C
°C
°C
°C
Total Gate Charge : Qg[nC]
0.5
Drain Current : −I
Source-Drain Voltage
2
Rev.A
RTQ025P02
1.0
vs.Drain Current
3
1
D
4
[A]
1.5
SD
Ta=25 C
V
I
R
pulsed
V
pulsed
D
[V]
DD
G
V
pulsed
=−3.5V
GS
=10Ω
GS
5
=−15V
=−4.5V
=0V
3/4
2.0
10
6