RSS060P05 ROHM Co. Ltd., RSS060P05 Datasheet
首页 Datasheets MOSFETs, GaNFETs - Single RSS060P05
Manufacturer Part Number
RSS060P05
Description
4v Drive Pch Mos Fet
Manufacturer
ROHM Co. Ltd.
Available stocks
Part Number:
RSS060P05 FRA
Part Number:
RSS060P05 TB1
Transistor
4V Drive Pch MOS FET
RSS060P05
Silicon P-channel
MOS FET
1) Built-in G-S Protection Diode.
2) Small and Surface Mount Package (SOP8).
Power switching , DC / DC converter , Inverter
D
Ga
D
S
(
T
C
R
*1 P
*2 Mounted on a ceramic board
C
*
Type
RSS060P05
Body diode)
Structure
Features
Applications
Packaging dimensions
Absolute maximum ratings (Ta=25°C)
otal power dissipation
Thermal resistance
ource current
Mounted on a ceramic board
rain-source voltage
rain current
hanel temperature
ange of Storage temperature
hanel to ambient
te-source voltage
W≤10µs、Duty cycle≤1%
Parameter
Parameter
Package
Code
Basic ordering unit (pieces)
Continuous
Pulsed
Continuous
Pulsed
Taping
2500
Symbol
Symbol
R
TB
V
V
th(ch-a) *
I
I
T
P
T
DP
GSS
I
I
SP
DSS
stg
D
S
ch
D
*1
*1
*2
-55 to +150
Limits
Limits
±6.0
62.5
-1.6
±20
±24
150
-45
-24
2
o
Unit
Unit
C/W
W
o
o
V
V
A
A
A
A
C
C
External dimensions (Unit : mm)
SOP8
1pin mark
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Equivalent circuit
1.27
( 8 )
( 1 )
0.4
(8)
(1)
5.0
∗2
( 5 )
( 4 )
(7)
(2)
Each lead has same dimensions
(6)
(3)
∗1
RSS060P05
1.75
0.2
(5)
(4)
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6 )Drain
(7) Drain
(8) Drain
1/4
Related parts for RSS060P05
RSS060P05 Summary of contents
... 150 -55 to +150 C stg Symbol Limits Unit o R 62.5 C/W th(ch-a) * RSS060P05 5.0 1.75 0 0.2 1.27 1pin mark Each lead has same dimensions Equivalent circuit (8) (7) (6) (5) ∗2 ∗1 (1) Source (2) Source (3) Source (4) Gate (5) Drain (1) (2) (3) (4) (6 )Drain ∗1 ESD PROTECTION DIODE ...
... V DD ∗ − − = −6.0A 6 ∗ − − R =4.2Ω 8 Min. Typ. Max. Unit ∗ − − −1.2 = −6A RSS060P05 Conditions =0V DS = −1mA D = −10V GS = −4. −4. −6A D −25 V −25V V = − =10Ω G Conditions =0V GS 2/4 ...
... Gate-Source Voltage : -V Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 10000 Ciss 1000 tf 100 td(off) td(on 100 0.01 0.1 1 Drain Current : -I D Fig.8 Switching Characteristics RSS060P05 1000 -4.5V Ta=125 pulsed -25 C 100 0.01 0.1 Drain Current : -I Fig.3 Static Drain-Source On-State Resistance vs ...
... (Const.) D.U. Fig.12 Gate Charge Test Circuit d(on) Fig.11 Switching Time Waveforms Fig.13 Gate Charge Waveform RSS060P05 10% 90% 90% 90% 10% 10 d(off off Charge 4/4 ...
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...
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