RSS060P05 ROHM Co. Ltd., RSS060P05 Datasheet - Page 3

• Manufacturer Part Number: RSS060P05
• Description: 4v Drive Pch Mos Fet
• Manufacturer: ROHM Co. Ltd.

Transistor
Electrical characteristic curves
10000
1000
1000
Fig.1 Typical Transfer Characteristics
0.01
100
100
0.1
10
Fig.4 Static Drain-Source On-State
10
10
1
1
0.01
1.0
0.1
V
pulsed
Resistance vs. Drain Current (3)
GS
Fig.7 Typical capacitance vs.
V
pulsed
DS
= -4V
Ta=125
Ta=25
f=1MHz
V
75
25
-25
GS
= -10V
1.5
=0V
Gate-Source Voltage : -V
Source-Drain Voltage
Drain-Source Voltage : -V
o
C
o
o
o
o
C
C
C
C
Drain Current : -I
0.1
Ta=125
2.0
1
-25
75
25
o
o
o
o
C
C
C
C
2.5
D
1
[A]
10
GS
DS
3.0
[V]
[V]
Coss
Crss
Ciss
3.5
10
100
1000
10000
100
Fig.2 Static Drain-Source On-State
1000
200
150
100
10
100
50
1
0.01
10
0
1
0.01
Resistance vs. Drain Current (1)
0
V
pulsed
GS
Fig.8 Switching Characteristics
= -10V
Fig.5 Static Drain-Source
I
td(off)
td(on)
D
= -3.0A
Gate-Source Voltage : -V
Drain Current : -I
On-State Resistance vs.
Gate-Source Voltage
0.1
tr
5
tf
0.1
Drain Current : -I
Ta=125
I
D
= -6.0A
-25
75
25
o
o
o
o
C
C
C
C
D
1
[A]
10
D
1
[A]
GS
[V]
Ta=25
VDD= -25V
VGS= -10V
RG=10 Ω
Pulsed
Ta=25
pulsed
10
o
o
C
C
15
10
1000
100
0.01
10
10
0.1
1
10
8
6
4
2
0
0.01
1
0.0
0
Fig.3 Static Drain-Source On-State
Fig.9 Dynamic Input Characteristics
Ta=25
V
I
R
Pulsed
D
V
pulsed
DD
= -6.0A
G
GS
=10Ω
= -25V
Ta=125
= -4.5V
Resistance vs. Drain Current (2)
Fig.6 Source-Current vs.
o
C
-25
75
25
Source-Drain Voltage : -V
Total Gate Charge : Qg [nC]
o
o
o
o
RSS060P05
C
C
C
C
15
0.1
Source-Drain Voltage
Drain Current : -I
0.5
Ta=125
-25
75
25
o
o
o
o
C
C
C
C
D
30
1.0
[A]
1
SD
[V]
V
pulsed
3/4
GS
=0V
4
1.5
10
5