RDD050N20 ROHM Co. Ltd., RDD050N20 Datasheet
RDD050N20
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RDD050N20 Summary of contents
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... W D °C T 150 ch −55 to +150 °C T stg Symbol Limits Rth(ch-c) 6.25 RDD050N20 Equivalent Circuit ∗2 ∗1 BODY DIODE ∗2 GATE PROTECTION ∗1 DIODE (1)GATE (2)DRAIN (3)SOURCE (1) (2) (3) ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use ...
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... Q 3.7 gd Min. Typ. Max. Unit ∗ − − 1 5.0A − − 117 5.0A − − µC di/dt= 100A / µs 0.37 RDD050N20 Unit Conditions µA =±30V, V =0V ± ⎯ =1mA µA =200V =10V, I =1mA 4.0 V ...
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... Drain Current Pulsed 5 2 Ta= −25°C 1 Ta=25°C Ta=75°C Ta=125°C 0.5 0.2 0.1 0.05 0.05 0.1 0.2 0 DRAIN CURRENT : I (A) D Fig.8 Forward Transfer Admittance vs. Drain Current RDD050N20 100 10 1 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 0. (V) GATE-SOURCE VOLTAGE : V DS Fig.3 Typical Transfer Characteristics 2 =10V GS 1.75 1.5 1.25 1 ...
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... =100V V DD =160V TOTAL GATE CHARGE : Q (nC) g Fig.11 Dynamic Input Characteristics 10 RDD050N20 20 1000 Ta=25° dt=100A / µs = Pulsed 10 100 0.1 1 REVERSE DRAIN CURRENT : I Fig.12 Reverse Recovery Time vs. Reverse Drain Current Rev.A 10 (A) DR 4/5 ...
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... Transistors Switching characteristics measurement circuit Fig.1-1 Switching time measurement circuit Fig.2-1 Gate charge measurement circuit Fig.3-1 Avalanche measurement circuit RDD050N20 Fig.1-2 Switching waveforms Fig.2-2 Gate charge waveform Fig.3-2 Avalanche waveform Rev.A 5/5 ...
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Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...