RDD050N20 ROHM Co. Ltd., RDD050N20 Datasheet - Page 2

• Manufacturer Part Number: RDD050N20
• Description: 10v Drive Nch Mosfet
• Manufacturer: ROHM Co. Ltd.

Transistors
Forward voltage
Reverse recovery time
Reverse recovery charge
∗ Pulsed
Gate-Source Leakage
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Static Drain-Source On-State
Resistance
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
∗ Pulsed
Electrical characteristics (Ta=25°C)
Body diode characteristics (Source-drain) (Ta=25°C)
Parameter
Parameter
Symbol
V
Q
t
SD
rr
rr
V
Symbol
R
V
⏐Y
∗
(BR) DSS
t
t
C
I
I
C
GS (th)
DS (on)
C
d (on)
d (off)
Q
Q
GSS
DSS
Q
t
t
oss
rss
iss
gd
fs
r
f
gs
g
Min.
⏐
−
−
−
∗
∗
∗
∗
∗
∗
∗
∗
∗
Typ.
0.37
117
−
Min.
200
2.0
1.1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Max.
1.5
−
−
Typ.
0.55
292
1.8
9.3
2.8
3.7
Unit
92
28
10
22
23
28
⎯
⎯
⎯
⎯
µC
ns
V
I
I
di/dt= 100A / µs
S
DR
= 5.0A, V
= 5.0A, V
Max.
0.72
±10
4.0
25
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Conditions
GS
GS
=0V
=0V
Unit
µA
µA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
S
V
I
V
V
I
V
V
V
f=1MHz
I
V
R
R
V
V
I
D
D
D
D
GS
DS
DS
DS
DS
GS
GS
DD
GS
=1mA, V
=2.5A, V
=2.5A, V
L
G
=5A
=40Ω
=10Ω
=±30V, V
=200V, V
=10V, I
=10V, I
=10V
=0V
=10V
=100V
=10V
RDD050N20
Rev.A
Conditions
GS
GS
DD
D
D
=1mA
=2.5A
=0V
=10V
GS
DS
100V
=0V
=0V
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