PHB50N06T NXP Semiconductors, PHB50N06T Datasheet - Page 4

• Manufacturer Part Number: PHB50N06T
• Description: Trenchmos Transistor Standard Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
November 1997
TrenchMOS
Standard level FET
1000
RDS(ON) = VDS / ID
ID% = 100 I
100
10
I
120
110
100
Fig.2. Normalised continuous drain current.
1
D
120
110
100
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
1
0
ID / A
& I
0
Fig.3. Safe operating area. T
Fig.1. Normalised power dissipation.
0
0
PD%
ID%
DM
= f(V
20
PD% = 100 P
20
D
/I
40
40
D 25 ˚C
DS
DC
); I
10
transistor
60
60
DM
= f(T
single pulse; parameter t
VDS / V
80
80
Tmb / C
Tmb / C
D
mb
/P
); conditions: V
D 25 ˚C
Normalised Current Derating
100
100
Normalised Power Derating
120
120
= f(T
100
tp = 10 us
100 us
1 ms
10 ms
100 ms
mb
140
140
mb
= 25 ˚C
)
160
160
GS
7524-55
180
180
5 V
1000
p
4
ID/A
Fig.5. Typical output characteristics, T
100
Fig.6. Typical on-state resistance, T
80
60
40
20
0.001
40
35
30
25
20
15
0
0.01
0.1
0
0
10
RDS(ON)/mOhm
1
Fig.4. Transient thermal impedance.
16
12
Transient thermal impedance, Zth (K/W)
0.05
0.02
10
Z
0.5
0.2
0.1
VGS/V =
R
th j-mb
0
I
DS(ON)
2
D
= f(V
20
10us
= f(t); parameter D = t
10
= f(I
6
DS
30
pulse width, tp (s)
); parameter V
4
D
); parameter V
VSD/V
ID/A
40
1ms
6.5
50
6
P
D
7
Product specification
VGS/V =
0.1s
PHB50N06T
60
t
p
GS
T
GS
p
/T
8
j
8
D =
j
= 25 ˚C .
70
= 25 ˚C .
T
Rev 1.100
t
p
t
9
10
10s
80
9
8.5
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
10