PHB64N03LT NXP Semiconductors, PHB64N03LT Datasheet - Page 6

• Manufacturer Part Number: PHB64N03LT
• Description: Phb64n03lt Trenchmos Tm Logic Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 10026
Product data
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
R DSon
T
( )
T
0.03
0.02
0.01
(A)
j
j
I D
= 25 C
= 25 C
60
40
20
0
0
function of drain-source voltage; typical values.
of drain current; typical values.
0
0
T j = 25 C
T j = 25 C
0.5
10 V
20
5 V
1
4.5 V
40
V GS = 4 V
1.5
V GS = 2.5 V
V DS (V)
I D (A)
03ae65
03ae66
4.5 V
3.5 V
10 V
4 V
3 V
5V
60
Rev. 01 — 27 August 2002
2
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain-source on-state resistance
T
a
(A)
j
I D
1.5
0.5
a
= 25 C and 175 C; V
=
60
40
20
2
1
0
0
function of gate-source voltage; typical values.
factor as a function of junction temperature.
--------------------------- -
R
-60
0
DSon 25 C
R
V DS > I D x R DSon
DSon
1
0
2
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
DS
60
T j = 25 C
> I
PHB64N03LT
D
3
x R
DSon
120
4
175 C
T j ( C)
V GS (V)
03ae67
03ad57
180
5
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