PHB71NQ03LT NXP Semiconductors, PHB71NQ03LT Datasheet - Page 6

• Manufacturer Part Number: PHB71NQ03LT
• Description: Trenchmos Logic Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 09821
Product data
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
R DSon
(m )
T
T
(A)
I D
j
j
15
= 25 C
= 25 C
80
60
40
20
10
20
5
0
function of drain-source voltage; typical values.
of drain current; typical values.
0
0
0
T j = 25 C
T j = 25 C
0.2
20
0.4
40
V GS = 4.5 V
10 V
0.6
7 V
60
6 V
V GS = 3 V
0.8
I D (A)
V DS (V)
5.5 V
03ai77
03ai78
4.5 V
3.5 V
5.5 V
5 V
10 V
5 V
4 V
6 V
7 V
80
1
Rev. 01 — 25 June 2002
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain-source on-state resistance
PHP/PHB/PHD71NQ03LT
T
a
(A)
a
j
I D
1.5
0.5
= 25 C and 175 C; V
=
80
60
40
20
2
1
0
0
function of gate-source voltage; typical values.
factor as a function of junction temperature.
-60
---------------------------- -
R
0
DSon 25 C
V DS > I D x R DSon
R
DSon
175 C
0
2
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
DS
60
I
T j = 25 C
D
x R
4
DSon
120
V GS (V)
T j ( C)
03ai79
03af18
180
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