SIS410DN Vishay, SIS410DN Datasheet
SIS410DN
Available stocks
Related parts for SIS410DN
SIS410DN Summary of contents
Page 1
... Bottom View Ordering Information: SiS410DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current Avalanche Energy Continuous Source-Drain Diode Current Maximum Power Dissipation ...
Page 2
... SiS410DN Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...
Page 3
... Q - Total Gate Charge (nC) g Gate Charge Document Number: 68944 S-82483-Rev. A, 13-Oct- 2.0 2.5 3 SiS410DN Vishay Siliconix ° 125 ° 0.0 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Transfer Characteristics 2000 C iss 1600 ...
Page 4
... SiS410DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2.0 1 250 µA D 1.6 1.4 1.2 1.0 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.015 0.012 0.009 °C J 0.006 0.003 0.000 0.8 1.0 1 ...
Page 5
... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68944 S-82483-Rev. A, 13-Oct-08 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) SiS410DN Vishay Siliconix ...
Page 6
... SiS410DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...
Page 7
... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...