SIS410DN Vishay, SIS410DN Datasheet - Page 4

• Manufacturer Part Number: SIS410DN
• Description: N-channel 20-v D-s Mosfet
• Manufacturer: Vishay

SiS410DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
T
J
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
= 150 °C
J
25
- Temperature (°C)
I
D
= 250 µA
0.6
50
75
0.8
0.01
100
0.1
T
10
100
0.01
J
1
Limited by R
= 25 °C
Safe Operating Area, Junction-to-Ambient
* V
1.0
Single Pulse
125
T
GS
A
= 25 °C
> minimum V
V
DS(on)
150
0.1
DS
1.2
- Drain-to-Source Voltage (V)
*
GS
BVDSS Limited
at which R
1
0.015
0.012
0.009
0.006
0.003
0.000
DS(on)
50
40
30
20
10
0
0.01
10
0
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
1 ms
10 ms
100 ms
1 s
10 s
DC
0.1
2
V
100
GS
- Gate-to-Source Voltage (V)
4
1
Time (s)
S-82483-Rev. A, 13-Oct-08
Document Number: 68944
6
10
T
T
I
D
J
J
= 125 °C
= 20 A
= 25 °C
8
100
600
10