NDD03N60Z ON Semiconductor, NDD03N60Z Datasheet

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NDD03N60Z

Manufacturer Part Number
NDD03N60Z
Description
Power Mosfet 600v 2.6a 3.6 Ohm Single N-channel Dpak
Manufacturer
ON Semiconductor
Datasheet

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NDF03N60Z, NDP03N60Z,
NDD03N60Z
N-Channel Power MOSFET
600 V, 3.3 W
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. I
ABSOLUTE MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2010
March, 2010 − Rev. 2
Drain−to−Source Voltage
Continuous Drain Current
R
Continuous Drain Current
R
Pulsed Drain Current, V
@ 10 V
Power Dissipation R
Gate−to−Source Voltage
Single Pulse Avalanche
Energy, I
ESD (HBM)
(JESD 22−A114)
RMS Isolation Voltage (t =
0.3 sec., R.H. ≤ 30%,
T
Peak Diode Recovery
Continuous Source Current
(Body Diode)
Maximum Temperature for
Soldering Leads, 0.063″
(1.6 mm) from Case for
10 s Package Body for 10 s
Operating Junction and
Storage Temperature Range
A
Low ON Resistance
Low Gate Charge
100% Avalanche Tested
These Devices are Pb−Free and are RoHS Compliant
qJC
qJC
SD
= 25°C) (Figure 17)
T
= 3.0 A, di/dt ≤ 100 A/ms, V
A
= 100°C
D
Rating
= 3.0 A
qJC
GS
Symbol
T
V
T
V
dv/dt
V
J
V
E
I
P
DD
DSS
T
PKG
, T
DM
I
I
ISO
I
esd
GS
AS
D
D
S
D
L
stg
≤ BV
(T
C
DSS
(Note 1)
(Note 1)
(Note 1)
= 25°C unless otherwise noted)
4500
NDF
3.0
1.9
12
25
, T
J
4.5 (Note 2)
= +150°C
−55 to 150
3000
600
100
300
260
3.0
NDP
30
3.0
1.9
12
78
NDD
1.65
2.6
10
61
1
V/ns
Unit
mJ
°C
°C
W
V
A
A
A
V
V
V
A
CASE 221D
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
TO−220FP
MARKING AND ORDERING INFORMATION
1
STYLE 1
2
3
600 V
V
DSS
G (1)
CASE 221A
1
TO−220AB
STYLE 5
http://onsemi.com
2
3
N−Channel
CASE 369D
Publication Order Number:
D (2)
R
STYLE 2
DS(on)
1
IPAK
2
3
S (3)
(TYP) @ 1.2 A
3.3 W
NDF03N60Z/D
4
CASE 369AA
1 2
STYLE 2
DPAK
3
4

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NDD03N60Z Summary of contents

Page 1

... NDF03N60Z, NDP03N60Z, NDD03N60Z N-Channel Power MOSFET 600 V, 3.3 W Features • Low ON Resistance • Low Gate Charge • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (T Rating Symbol Drain−to−Source Voltage V DSS Continuous Drain Current ...

Page 2

... Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%. NDP03N60Z NDF03N60Z NDD03N60Z (Note 3) NDP03N60Z (Note 3) NDF03N60Z (Note 4) NDD03N60Z (Note 3) NDD03N60Z− 25°C unless otherwise noted) J Test Conditions Reference to 25°C, ...

Page 3

V 3.5 3 2.5 2.0 1.5 1.0 0.5 0.0 0.0 5.0 10.0 15 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 5.00 4.75 4.50 4.25 4.00 3.75 3.50 3.25 5.5 6.0 ...

Page 4

T = 150° 125° 100 150 200 250 300 350 400 450 500 550 600 V , DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Drain−to−Source Leakage Current versus Voltage 15.0 14.0 13.0 ...

Page 5

... Figure 14. Thermal Impedance (Junction−to−Case) for NDD03N60Z 100 50% (DUTY CYCLE) 10 20% 10% 5.0% 1 2.0% 1.0% 0.1 SINGLE PULSE 0.01 1E−06 1E−05 1E−04 Figure 15. Thermal Impedance (Junction−to−Ambient) for NDD03N60Z TYPICAL CHARACTERISTICS 100 SINGLE PULSE 25° 0.1 LIMIT 0.01 100 1000 ...

Page 6

... Figure 16. Thermal Impedance (Junction−to−Case) for NDF03N60Z Measurement made between leads and heatsink with all leads shorted together. *For additional mounting information, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 1E−03 1E−02 1E−01 PULSE TIME (s) ...

Page 7

... ORDERING INFORMATION Order Number NDF03N60ZG NDP03N60ZG NDD03N60Z−1G NDD03N60ZT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NDF03N60ZG or NDP03N60ZG AYWW Gate Drain Package TO−220FP (Pb−Free) TO−220AB (Pb−Free) IPAK (Pb− ...

Page 8

PACKAGE DIMENSIONS TO−220 FULLPAK −B− −Y− 0.25 (0.010 ...

Page 9

... 0.13 (0.005) M *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS IPAK CASE 369D−01 ISSUE DPAK CASE 369AA−01 ISSUE A − ...

Page 10

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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