BF820W NXP Semiconductors, BF820W Datasheet - Page 2

• Manufacturer Part Number: BF820W
• Description: Npn High-voltage Transistors
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN high-voltage transistor in a SOT323 plastic package.
MARKING
Notes
1. * = p : made in Hong Kong.
QUICK REFERENCE DATA
2003 Sep 09
BF820W
V
V
I
P
h
C
f
SYMBOL
CM
T
FE
Telephony and professional communication equipment.
CBO
CEO
tot
re
NPN high-voltage transistor
Low current (max. 50 mA)
High voltage (max. 300 V).
* = t : made in Malaysia.
* = W : made in China.
TYPE NUMBER
collector-base voltage
collector-emitter voltage
peak collector current
total power dissipation
DC current gain
feedback capacitance
transition frequency
PARAMETER
1V*
MARKING CODE
open emitter
open base
T
I
I
I
C
C
C
amb
= 25 mA; V
= i
= 10 mA; V
c
= 0; V
(1)
25 C
CB
CONDITIONS
CE
CE
2
= 30 V; f = 1 MHz
= 20 V
= 10 V; f = 100 MHz
PINNING
handbook, halfpage
Fig.1 Simplified outline (SOT323) and symbol.
PIN
1
2
3
Top view
1
base
emitter
collector
3
50
60
MIN.
2
DESCRIPTION
MAM062
Product specification
300
300
100
200
1.6
MAX.
1
BF820W
3
2
V
V
mA
mW
pF
MHz
UNIT