BF821 NXP Semiconductors, BF821 Datasheet - Page 3

• Manufacturer Part Number: BF821
• Description: Pnp High-voltage Transistors
• Manufacturer: NXP Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
2004 Jan 16
V
V
V
I
I
I
P
T
T
T
R
I
I
h
V
C
f
C
CM
BM
j
CBO
EBO
T
SYMBOL
SYMBOL
SYMBOL
FE
stg
j
amb
CBO
CEO
EBO
tot
CEsat
th(j-a)
= 25 C unless otherwise specified.
re
PNP high-voltage transistors
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
feedback capacitance
transition frequency
BF821
BF823
BF821
BF823
PARAMETER
PARAMETER
PARAMETER
I
I
I
I
I
I
I
f = 100 MHz
E
E
C
C
C
C
C
3
open emitter
open base
open collector
T
= 0; V
= 0; V
amb
= 0; V
= 25 mA; V
= 30 mA; I
= I
= 10 mA; V
c
= 0; V
note 1
25 C; note 1
CB
CB
EB
CONDITIONS
CONDITIONS
= 200 V
= 200 V; T
= 5 V
CB
CONDITIONS
B
CE
CE
= 30 V; f = 1 MHz
= 5 mA
= 20 V
= 10 V;
j
= 150 C
50
60
BF821; BF823
MIN.
MIN.
65
65
VALUE
Product specification
500
250
+150
150
+150
1.6
MAX.
MAX.
300
250
300
250
5
50
100
50
10
10
50
800
UNIT
K/W
V
V
V
V
V
mA
mA
mA
mW
nA
nA
mV
pF
MHz
UNIT
UNIT
C
C
C
A