ATF-521P8 Avago Technologies, ATF-521P8 Datasheet

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ATF-521P8

Manufacturer Part Number
ATF-521P8
Description
Atf-521p8 Gaas Field Effect
Manufacturer
Avago Technologies
Datasheet

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High Linearity Enhancement Mode
2x2 mm
Data Sheet
Description
Avago Technologies’ ATF‑521P8 is a single‑voltage high
linearity, low noise E‑pHEMT housed in an 8‑lead JEDEC‑
standard leadless plastic chip carrier (LPCC
The device is ideal as a medium‑power, high‑linearity
amplifier. Its operating frequency range is from 50 MHz
to 6 GHz.
The thermally efficient package measures only 2mm x
2mm x 0.75mm. Its backside metalization provides ex‑
cellent thermal dissipation as well as visual evidence of
solder reflow. The device has a Point MTTF of over 300
years at a mounting temperature of +85°C. All devices
are 100% RF & DC tested.
Specifications
• 2 GHz; 4.5V, 200 mA (Typ.)
• 42 dBm output IP3
• 26.5 dBm output power at 1 dB gain compression
• 1.5 dB noise figure
• 17 dB Gain
• 12.5 dB LFOM
Applications
• Front‑end LNA Q2 and Q3, driver or pre‑driver amplifier
• Driver amplifier for WLAN, WLL/RLL and MMDS applica‑
• General purpose discrete E‑pHEMT for other high linear‑
Note:
1. Enhancement mode technology employs a single positive V
2. Refer to reliability datasheet for detailed MTTF data
3. Conform to JEDEC reference outline MO229 for DRP‑N
4. Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC
for Cellular/PCS and WCDMA wireless infrastructure
tions
ity applications
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
bias power.
2
LPCC
[4]
[3]
Package
[1]
Pseudomorphic HEMT in
[3]
) package.
gs
,
Features
• Single voltage operation
• High linearity and P1dB
• Low noise figure
• Excellent uniformity in product specifications
• Small package size:
• Point MTTF > 300 years
• MSL‑1 and lead‑free
• Tape‑and‑reel packaging option available
Pin Connections and Package Marking
Pin 7 (Drain)
Pin 1 (Source)
Pin 4 (Source)
Note:
Package marking provides orientation and identification
“2P” = Device Code
“x” = Month code indicates the month of manufacture.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1C)
Refer to Avago Technologies Application Note A004R: Electrostatic
Discharge Damage and Control.
Pin 2 (Gate)
2.0 x 2.0 x 0.75 mm
Pin 8
Pin 6
Pin 5
Pin 3
Bottom View
Attention:
Observe precautions for handling electrostatic
sensitive devices.
Top View
2Px
3
[2]
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
Pin 8
Pin 7 (Drain)
Pin 6
Pin 5

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ATF-521P8 Summary of contents

Page 1

... Data Sheet Description Avago Technologies’ ATF‑521P8 is a single‑voltage high linearity, low noise E‑pHEMT housed in an 8‑lead JEDEC‑ standard leadless plastic chip carrier (LPCC The device is ideal as a medium‑power, high‑linearity amplifier. Its operating frequency range is from 50 MHz to 6 GHz ...

Page 2

... ATF-521P8 Absolute Maximum Ratings Symbol Parameter V Drain – Source Voltage DS V Gate –Source Voltage GS V Gate Drain Voltage GD I Drain Current DS I Gate Current GS P Total Power Dissipation diss P RF Input Power in max. T Channel Temperature CH T Storage Temperature STG θ Thermal Resistance ...

Page 3

... ATF-521P8 Electrical Specifications T = 25°C, DC bias for RF parameters is Vds = 4.5V and Ids = 200 mA unless otherwise specified. A Symbol Parameter and Test Condition Vgs Operational Gate Voltage Vth Threshold Voltage Idss Saturated Drain Current Gm Transconductance Igss Gate Leakage Current NF Noise Figure [1] G Gain [1] OIP3 ...

Page 4

Ohm 110 Ohm 1.5 pF .02 λ .03 λ RF Input Ohm 2.2 µF Gate Supply Figure 7. Simplified schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement ...

Page 5

... ATF-521P8 Typical Performance Curves Tuned for Optimal OIP3 4. 100 150 200 250 300 350 400 I (mA) d Figure 8. OIP3 vs. I and GHz 4. 100 150 200 250 300 350 400 I (mA) dq Figure 11. P1dB vs. I and GHz ...

Page 6

... ATF-521P8 Typical Performance Curves, Tuned for Optimal OIP3 4. 100 150 200 250 300 350 400 I (mA) dq Figure 17. PAE @ P1dB vs. I and GHz 85°C 25 25°C -40° 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) Figure 20. OIP3 vs. Temp and Freq tuned for optimal OIP3 at 4 ...

Page 7

... ATF-521P8 Typical Performance Curves Tuned for Optimal P1dB 4. 100 150 200 250 300 350 400 I (mA) d Figure 24. OIP3 vs. I and GHz 4. 100 150 200 250 300 350 400 I (mA) dq Figure 27. P1dB vs. I and GHz ...

Page 8

... ATF-521P8 Typical Performance Curves Tuned for Optimal P1dB 4. 100 150 200 250 300 350 400 I dq (mA) Figure 33. PAE @ P1dB vs. I and GHz 85°C 25 25°C -40° 0.5 1.5 2 2 FREQUENCY (GHz) Figure 36 ...

Page 9

... ATF-521P8 Typical Scattering Parameters at 25°C, V Freq GHz Mag. Ang. dB 0.1 0.613 ‑96.9 33.2 0.2 0.780 ‑131.8 30.0 0.3 0.831 ‑147.2 27.3 0.4 0.855 ‑156.4 25.1 0.5 0.860 ‑162.0 23.5 0.6 0.878 ‑166.7 22.0 0.7 0.888 ‑170.2 20.8 0.8 0.887 ‑172.6 19.7 0.9 0.894 ‑174.5 18.7 1.0 0.886 ‑177.2 17.9 1.5 0.892 175.0 14.3 2.0 0.883 168.7 12.1 2.5 0.890 162.8 10.2 3.0 0.884 157.2 8.6 4.0 0.890 146.6 6 ...

Page 10

... ATF-521P8 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.823 ‑89.9 34.4 0.2 0.873 ‑128.7 30.5 0.3 0.879 ‑145.5 27.6 0.4 0.885 ‑155.1 25.2 0.5 0.883 ‑161.1 23.6 0.6 0.897 ‑165.9 22.1 0.7 0.895 ‑169.5 20.8 0.8 0.894 ‑171.9 19.6 0.9 0.900 ‑174.7 18.7 1 0.893 ‑176.6 17.8 1.5 0.894 175.3 14.3 2 0.889 168.5 12.0 2.5 0.888 162.6 10.2 3 0.892 157.0 8.6 4 0.884 146.5 6.0 5 0.891 137.0 4 ...

Page 11

... ATF-521P8 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.913 ‑84.6 34.2 0.2 0.900 ‑125.0 30.3 0.3 0.896 ‑142.0 27.4 0.4 0.893 ‑152.3 25.1 0.5 0.882 ‑158.4 23.4 0.6 0.895 ‑164.2 21.8 0.7 0.893 ‑167.8 20.6 0.8 0.895 ‑170.8 19.5 0.9 0.897 ‑173.0 18.5 1 0.895 ‑175.5 17.6 1.5 0.893 176.0 14.1 2 0.889 169.2 11.8 2.5 0.882 163.6 10.0 3 0.888 157.9 8.4 4 0.883 146.8 5.9 5 0.885 137.7 3 ...

Page 12

... ATF-521P8 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.843 ‑90.5 34.3 0.2 0.879 ‑129.3 30.3 0.3 0.888 ‑146.1 27.4 0.4 0.892 ‑155.6 25.1 0.5 0.886 ‑161.5 23.4 0.6 0.896 ‑165.7 21.8 0.7 0.897 ‑169.5 20.6 0.8 0.898 ‑172.2 19.5 0.9 0.896 ‑174.9 18.6 1 0.896 ‑176.7 17.6 1.5 0.898 175.2 14.1 2 0.887 168.0 11.8 2.5 0.893 162.8 10.0 3 0.886 156.9 8.4 4 0.887 146.6 5.9 5 0.894 136.8 3 ...

Page 13

... ATF-521P8 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.867 ‑94.6 33.7 0.2 0.894 ‑132.9 29.4 0.3 0.899 ‑148.2 26.5 0.4 0.896 ‑157.2 24.1 0.5 0.892 ‑162.8 22.4 0.6 0.910 ‑167.4 20.8 0.7 0.906 ‑170.8 19.6 0.8 0.902 ‑173.6 18.4 0.9 0.907 ‑175.2 17.5 1 0.902 ‑177.7 16.6 1.5 0.900 174.2 13.1 2 0.896 168.1 10.8 2.5 0.896 162.3 9.0 3 0.887 156.7 7.4 4 0.890 145.7 4.9 5 0.898 136.3 3 ...

Page 14

... S11 conjugate match. Γ S S11 * Figure 1. Input Match for ATF-521P8 at 2 GHz. Figure 1. Input Match for ATF-521P 8 GHz. Thus, it should be obvious from the illustration above that if this device is matched for maximum return loss i.e. S11*, then OIP3 will be sacrificed. Conversely, if ATF‑ ...

Page 15

... Amp + + Frequency Frequency Figure 7. Input and Output Match for ATF-521P8 at 2 GHz. 15 Figure 7 displays the input and output matching se‑ lected for ATF‑521P8. In this example the input and out‑ put match both essentially function as high pass filters, but the high frequency gain of the device rolls off pre‑ ...

Page 16

... 2PL ATF-521P8 C2 Figure 9. Active Bias Circuit calculate the values of R1, R2, R3, and R4 the follow‑ ing parameters must be know or chosen first the device drain‑to‑source current the Reference current for active bias; ...

Page 17

... Figure 11. Pin 8 Pin 1 (Source) Pin 7 (Drain) Pin 2 (Gate) Pin 6 Pin 3 Pin 5 Pin 4 (Source) Bottom View Figure 11. LPCC Package for ATF-521P8 short Figure 12. ATF-521P8 demoboard. 17 This simplifies RF grounding by reducing the amount of inductance from the source to ground also recom‑ ...

Page 18

... Resistors R5 and R6 also help terminate low frequencies, and can prevent resonant frequencies be‑ tween the two bypass capacitors. Performance of ATF-521P8 at 2140 MHz ATF‑521P8 delivers excellent performance in the WCD‑ MA frequency band. With a drain‑to‑source voltage of 4.5V and a drain current of 200 mA, this device has 16 gain and 1 ...

Page 19

... Figure 16. Input and Output Return Loss vs. Frequency. Perhaps the most critical system level specification for the ATF‑521P8 lies in its distortion‑less output power. Typically, amplifiers are characterized for linearity by measuring OIP3. This is a two‑tone harmonic measure‑ ment using CW signals. But because WCDMA is a modu‑ ...

Page 20

... ATF‑521P8 demoboard. The first case is done with just the demoboard by itself. The second case is the ATF demoboard mounted on a chassis or Pwr (dB) metal casing, and the results are given below: ‑ ...

Page 21

... Thus, for reliable operation of ATF‑521P8 and extended MTBF recommended to use some form of thermal heatsinking. This may include any or all of the following suggestions: • Maximize vias underneath and around package; • Maximize exposed surface metal; • Use greater copper clad; ...

Page 22

PCB Land Pattern and Stencil Design 2.80 (110.24) 0.70 (27.56) 0.25 (9.84) PIN 1 φ0.20 (7.87) Solder + mask 0.60 (23.62) RF transmission 0.80 (31.50) line 0.15 (5.91) 0.55 (21.65) PCB Land Pattern (top view) Device Orientation REEL USER FEED ...

Page 23

... For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Pte. in the United States and other countries. Data subject to change. Copyright © 2006 Avago Technologies Pte. All rights reserved. ...

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