ATF-58143 Avago Technologies, ATF-58143 Datasheet - Page 3

• Manufacturer Part Number: ATF-58143
• Description: Atf-58143 Gaas Field Effect
• Manufacturer: Avago Technologies

ATF-58143 Electrical Specifications
T
Notes:
1. Measurements obtained using production test board described in Figure 5.
2. Typical values determined from a sample size of 500 parts from 3 wafers.
RFin
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB and OIP3 measurements. This circuit represents a
trade-off between an optimal noise match and associated impedance matching circuit losses.

Symbol
Vgs
Vth
Idss
Gm
Igss
NF
Ga
OIP3
P1dB
A
= 25°C, RF parameters measured in a test circuit for a typical device
Parameter and Test Condition
Operational Gate Voltage
Threshold Voltage
Saturated Drain Current
Transconductance
Gate Leakage Current
Noise Figure
Associated Gain
Output 3
Intercept Point
1dB Compressed
Output Power
0.6 dB loss
matching
rd
input
Order
[1]
28.2 + j9.4
[1]
[1]
[1]
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 2 GHz
f = 2 GHz
f = 2 GHz
f = 2 GHz
f = 2 GHz
f = 2 GHz
f = 2 GHz
f = 2 GHz
51 – j3.3
matching
output
0.7 dB loss
Vds = 3V, Ids = 30 mA
Vds = 3V, Ids = 4 mA
Vds = 3V, Vgs = 0V
gm = ∆Idss/∆Vgs;
∆Vgs = 0.75 – 0.7 = 0.05V
Vgd = Vgs = ‑3V
Vds = 3V, Ids = 30 mA
Vds = 3V, Ids = 30 mA
Vds = 4V, Ids = 30 mA
Vds = 4V, Ids = 30 mA
Vds = 3V, Ids = 30 mA
Vds = 3V, Ids = 30 mA
Vds = 4V, Ids = 30 mA
Vds = 4V, Ids = 30 mA
Vds = 3V, Ids = 30 mA
Vds = 3V, Ids = 30 mA
Vds = 4V, Ids = 30 mA
Vds = 4V, Ids = 30 mA
Vds = 3V, Ids = 30 mA
Vds = 3V, Ids = 30 mA
Vds = 4V, Ids = 30 mA
Vds = 4V, Ids = 30 mA
Vds = 3V,
RFout
Units
V
V
µA
mmho
µA
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
Min.
0.4
0.18
—
230
—
—
—
—
—
15
—
—
—
29
—
—
—
—
—
—
—
Typ.
0.51
0.38
1
410
—
0.5
0.3
0.5
0.3
16.5
23.1
17.7
22.5
30.5
28.6
31.5
31.0
19
18
21
19
[2]
Max.
0.75
0.52
5
560
200
0.9
—
—
—
18.5
—
—
—
—
—
—
—
—
—
—
—