NE3512S02 Renesas Electronics Corporation., NE3512S02 Datasheet - Page 2

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NE3512S02

Manufacturer Part Number
NE3512S02
Description
C To Ku Band Super Low Noise Amplifier N-channel Hj-fet
Manufacturer
Renesas Electronics Corporation.
Datasheet

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RECOMMENDED OPERATING CONDITIONS (T
ELECTRICAL CHARACTERISTICS (T
2
Drain to Source Voltage
Drain Current
Input Power
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cutoff Voltage
Transconductance
Noise Figure
Associated Gain
Parameter
Parameter
Symbol
Symbol
V
I
V
I
GS (off)
NF
P
GSO
G
DSS
g
I
DS
D
m
in
a
A
V
V
V
V
V
Data Sheet PG10592EJ01V0DS
= +25°C, unless otherwise specified)
GS
DS
DS
DS
DS
MIN.
1
5
= −3 V
= 2 V, V
= 2 V, I
= 2 V, I
= 2 V, I
D
D
D
Test Conditions
TYP.
GS
A
= 100
= 10 mA
= 10 mA, f = 12 GHz
10
2
= +25°C)
= 0 V
µ
A
MAX.
15
3
0
dBm
Unit
mA
V
MIN.
−0.2
12.5
15
40
TYP.
−0.7
0.35
13.5
0.5
40
55
MAX.
−2.0
0.5
10
70
NE3512S02
Unit
mA
mS
µ
dB
dB
V
A

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