NE3512S02 Renesas Electronics Corporation., NE3512S02 Datasheet - Page 3

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NE3512S02

Manufacturer Part Number
NE3512S02
Description
C To Ku Band Super Low Noise Amplifier N-channel Hj-fet
Manufacturer
Renesas Electronics Corporation.
Datasheet

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TYPICAL CHARACTERISTICS (T
Remark The graphs indicate nominal characteristics.
250
200
150
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
50
80
60
40
20
–2.0
0
0
MINIMUM NOISE FIGURE,
2
ASSOCIATED GAIN vs. FREQUENCY
DRAIN CURRENT vs.
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
GATE TO SOURCE VOLTAGE
4
Gate to Source Voltage V
50
Ambient Temperature T
6
Frequency f (GHz)
Mounted on Glass Epoxy PCB
(1.08 cm
100
8
G
NF
a
–1.0
10
min
2
150
× 1.0 mm (t) )
12
A
GS
14
(˚C)
A
V
V
I
200
(V)
D
DS
= +25°C, unless otherwise specified)
DS
= 10 mA
= 2 V
16
= 2 V
Data Sheet PG10592EJ01V0DS
250
18
0
25
20
15
10
5
0
100
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
MINIMUM NOISE FIGURE,
80
60
40
20
ASSOCIATED GAIN vs. DRAIN CURRENT
0
0
f = 12 GHz
V
DS
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
= 2 V
Drain to Source Voltage V
5
Drain Current I
10
NF
1.0
G
min
a
15
D
(mA)
DS
V
(V)
NE3512S02
20
GS
–0.2 V
–0.4 V
–0.6 V
= 0 V
2.0
25
16
14
12
10
8
6
4
2
0
3

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