NE3512S02 Renesas Electronics Corporation., NE3512S02 Datasheet - Page 3
![no-image](/images/manufacturer_photos/0/5/561/renesas_electronics_corporation__sml.jpg)
NE3512S02
Manufacturer Part Number
NE3512S02
Description
C To Ku Band Super Low Noise Amplifier N-channel Hj-fet
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.NE3512S02.pdf
(9 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NE3512S02-T1
Manufacturer:
NEC
Quantity:
20 000
Company:
Part Number:
NE3512S02-T1C-A
Manufacturer:
NEC
Quantity:
10 000
Part Number:
NE3512S02-T1C-A
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Part Number:
NE3512S02-T1D
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Part Number:
NE3512S02-T1D-A
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
TYPICAL CHARACTERISTICS (T
Remark The graphs indicate nominal characteristics.
250
200
150
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
50
80
60
40
20
–2.0
0
0
MINIMUM NOISE FIGURE,
2
ASSOCIATED GAIN vs. FREQUENCY
DRAIN CURRENT vs.
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
GATE TO SOURCE VOLTAGE
4
Gate to Source Voltage V
50
Ambient Temperature T
6
Frequency f (GHz)
Mounted on Glass Epoxy PCB
(1.08 cm
100
8
G
NF
a
–1.0
10
min
2
150
× 1.0 mm (t) )
12
A
GS
14
(˚C)
A
V
V
I
200
(V)
D
DS
= +25°C, unless otherwise specified)
DS
= 10 mA
= 2 V
16
= 2 V
Data Sheet PG10592EJ01V0DS
250
18
0
25
20
15
10
5
0
100
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
MINIMUM NOISE FIGURE,
80
60
40
20
ASSOCIATED GAIN vs. DRAIN CURRENT
0
0
f = 12 GHz
V
DS
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
= 2 V
Drain to Source Voltage V
5
Drain Current I
10
NF
1.0
G
min
a
15
D
(mA)
DS
V
(V)
NE3512S02
20
GS
–0.2 V
–0.4 V
–0.6 V
= 0 V
2.0
25
16
14
12
10
8
6
4
2
0
3