NE6510379A Renesas Electronics Corporation., NE6510379A Datasheet

NE6510379A

Manufacturer Part Number

NE6510379A

Description

3 W L-band Power Gaas Hj-fet

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.NE6510379A.pdf (8 pages)

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Document No. P13677EJ1V0DS00 (1st edition)

Date Published August 1998 N CP(K)

Printed in Japan

DESCRIPTION

communication systems. It is capable of delivering 3 watt of output power (1/3 Duty pulse operation) with high linear

gain, high efficiency and excellent distortion.

FEATURES

• GaAs HJ-FET Structure

• High Output Power

• High Linear Gain

• High Power Added Efficiency: 58% typ. @V

ORDERING INFORMATION (PLAN)

ABSOLUTE MAXIMUM RATINGS (T

NE6510379A-T1

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Gate Forward Current

Gate Reverse Current

Total Power Dissipation

Channel Temperature

Storage Temperature

The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transmitter applications for mobile

Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.

Remark

Operation in excess of any one of these parameters may result in permanent damage.

Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive

Part Number

Parameter

To order evaluation samples, please contact your local NEC sales office.

(Part number for sample order: NE6510379A)

device.

79A

3 W L-BAND POWER GaAs HJ-FET

The information in this document is subject to change without notice.

Package

PRELIMINARY DATA SHEET

: P

: G

Symbol

52% typ. @V

GSO

stg

= +35 dBm typ. @V

= +32.5 dBm typ. @V

= 13 dB typ. @V

= 8 dB typ. @V

= 25°C)

12 mm tape width, 1 kpcs/reel

= 3.5 V, I

–65 to +150

Ratings

Supplying Form

150

4.2

–4

= 3.5 V, I

Dset

= 3.5 V, I

= 200 mA, f = 900 MHz, Pin = +24 dBm, 1/3 duty

= 200 mA, f = 1.9 GHz, Pin = +26 dBm, 1/3 duty

Dset

N-CHANNEL GaAs HJ-FET

= 200 mA, f = 1.9 GHz, Pin = 0 dBm, 1/3 duty

Dset

= 200 mA, f = 900 MHz, Pin = 0 dBm, 1/3 duty

= 200 mA, f = 900 MHz, Pin = +24 dBm, 1/3 duty

= 200 mA, f = 1.9 GHz, Pin = +26 dBm, 1/3 duty

Unit

°C

NE6510379A

1998

Related parts for NE6510379A

NE6510379A Summary of contents

Page 1

... PRELIMINARY DATA SHEET 3 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510379A GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems capable of delivering 3 watt of output power (1/3 Duty pulse operation) with high linear gain, high efficiency and excellent distortion. ...

Page 2

... Channel to Case f = 1.9 GHz 3 Pin = +26 dBm 100 I = 200 mA (RF OFF) Dset Note 2 Test Conditions f = 900 MHz 3 Pin = +24 dBm 100 I = 200 mA (RF OFF) Dset Preliminary Data Sheet NE6510379A MIN. TYP. MAX. Unit 3.5 4.2 V 1/3 – 5.0 dB +110 °C MIN. TYP. MAX. Unit 3.7 A – ...

Page 3

... NE6510379A S-PARAMETERS TEST CONDITIONS freq. (MHz) MAG. ANG. (deg.) 600 0.958 178.7 700 0.956 178.1 800 0.954 177.1 900 0.956 176.0 1000 0.953 175.3 1100 0.952 174.4 1200 0.951 173.9 1300 0.949 173.2 1400 0.949 172.2 1500 0.952 170.6 1600 ...

Page 4

... 2 270 100 Preliminary Data Sheet NE6510379A Tantalum Condenser 100 F LINE OUTPUT GND Substrate: Teflon glass ( 0.8 mm Tantalum Condenser 100 F 50 LINE ...

Page 5

... Package Dimensions (Unit: mm) 4.2 max. Source Gate 0.4 0.15 5.7 max. 79A Package Recommended P.C.B. Layout (Unit: mm) Drain Source 1.5 0.2 Gate Drain Bottom View 4.0 1.7 Stop up the hole with a rosin or something to avoid solder flow. Gate through hole 0.2 0.5 0.5 6.1 Preliminary Data Sheet NE6510379A Source Drain 0.8 max. 3.6 0 ...

Page 6

... Note After opening the dry pack, keep place below 25°C and 65% RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). 6 Soldering Conditions Note : None Note : None Preliminary Data Sheet NE6510379A For soldering methods and Recommended Condition Symbol IR35-00-2 – ...

Page 7

... Preliminary Data Sheet NE6510379A 7 ...

Page 8

... The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. Caution NE6510379A M4 96. 5 ...

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