NE6510379A Renesas Electronics Corporation., NE6510379A Datasheet - Page 2

• Manufacturer Part Number: NE6510379A
• Description: 3 W L-band Power Gaas Hj-fet
• Manufacturer: Renesas Electronics Corporation.

RECOMMENDED OPERATING LIMITS
ELECTRICAL CHARACTERISTICS
(T
TYPICAL RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED)
(T
2
All RF characteristics is measured at 1/3 duty pulse operation, pulse width = 0.577 ms at 4.616 ms/frame)
All RF characteristics is measured at 1/3 duty pulse operation, pulse width = 0.577 ms at 4.616 ms/frame)
Drain to Source Voltage
Operating Duty Cycle
Gain Compression
Channel Temperature
Saturated Drain Current
Pinch-off Voltage
Gate to Drain Break Down
Voltage
Thermal Resistance
Output Power
Drain Current
Power Added Efficiency
Linear Gain
Output Power
Drain Current
Power Added Efficiency
Linear Gain
A
A
Notes 1. Pin = 0 dBm
Note Pin = 0 dBm
= 25°C , Unless otherwise specified, using NEC standard test fixture.
= 25°C , Unless otherwise specified, using NEC standard test fixture.
Characteristics
Characteristics
Characteristics
2. DC performance is 100% testing. RF performance is testing several samples per wafer.
Note 1
Note
Wafer rejection criteria for standard devices is 1 reject for several samples.
Symbol
Symbol
Symbol
Gcomp
BV
V
I
T
R
P
G
P
G
DSS
V
I
I
–
add
add
DS
ch
D
D
th
O
O
p
L
L
gd
Pulse width = 0.577 ms
V
V
I
Channel to Case
f = 1.9 GHz, V
Pin = +26 dBm, Rg = 100
I
Note 2
f = 900 MHz, V
Pin = +24 dBm, Rg = 100
I
gd
Dset
Dset
DS
DS
Preliminary Data Sheet
= 21 mA
= 2.5 V, V
= 2.5 V, I
= 200 mA (RF OFF)
= 200 mA (RF OFF)
Test Conditions
Test Conditions
Test Conditions
D
GS
DS
= 21 mA
DS
= 0 V
= 3.5 V
= 3.5 V
MIN.
MIN.
MIN.
–2.0
31.5
11
44
TYP.
TYP.
TYP.
32.5
35.0
1.40
13.0
760
3.5
3.7
8.0
52
58
4
MAX.
MAX.
MAX.
+110
–0.4
4.2
1/3
5.0
NE6510379A
7
°C/W
dBm
dBm
Unit
Unit
Unit
mA
dB
dB
dB
°C
%
%
V
A
V
V
A
–