NESG2107M33 Renesas Electronics Corporation., NESG2107M33 Datasheet - Page 3

• Manufacturer Part Number: NESG2107M33
• Description: Npn Sige Rf Transistor For High Frequency, Low Noise, High-gain Amplification
• Manufacturer: Renesas Electronics Corporation.

<R>
TYPICAL CHARACTERISTICS (T
Remark The graphs indicate nominal characteristics.
0.0001
0.001
0.01
300
250
200
150
100
100
100
130
0.1
50
10
80
60
40
20
0
1
0
0.4
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
V
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
CE
Collector to Emitter Voltage V
0.5
25
= 1 V
1
Base to Emitter Voltage V
Ambient Temperature T
800 A
μ
720 A
0.6
50
640 A
2
560 A
Mounted on Glass Epoxy PCB
(1.08 cm
μ
480 A
μ
μ
400 A
μ
0.7
75
3
μ
320 A
2
× 1.0 mm (t) )
μ
100
0.8
240 A
4
A
A
BE
(˚C)
μ
= +25°C, unless otherwise specified)
CE
(V)
I
B
125
0.9
(V)
= 80 A
5
160 A
Data Sheet PU10421EJ03V0DS
μ
μ
150
1.0
6
0.0001
0.001
0.01
100
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.1
10
0
1
0.4
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
V
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
CE
0.5
Collector to Base Voltage V
= 2 V
Base to Emitter Voltage V
2
0.6
4
0.7
NESG2107M33
6
0.8
BE
CB
f = 1 MHz
(V)
8
(V)
0.9
1.0
10
3