NESG2107M33 Renesas Electronics Corporation., NESG2107M33 Datasheet - Page 6
NESG2107M33
Manufacturer Part Number
NESG2107M33
Description
Npn Sige Rf Transistor For High Frequency, Low Noise, High-gain Amplification
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.NESG2107M33.pdf
(9 pages)
6
Remark The graphs indicate nominal characteristics.
15
10
–5
5
0
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
1
MSG
V
f = 4 GHz
CE
= 1 V
Collector Current I
MAG
10
|S
21e
|
2
C
(mA)
Data Sheet PU10421EJ03V0DS
100
15
10
–5
5
0
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
1
MSG
V
f = 4 GHz
CE
= 2 V
Collector Current I
MAG
10
NESG2107M33
|S
21e
|
2
C
(mA)
100