NE960R200 Renesas Electronics Corporation., NE960R200 Datasheet
NE960R200
Related parts for NE960R200
NE960R200 Summary of contents
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... X, Ku-band NEZ Series amplifiers etc. The NE961R200 and the NE960R200 are available in chip form. The NE960R200 has a via hole source grounding and PHS (Plated Heat Sink) for superior RF performance. The NE960R275 is available in a hermetically sealed ceramic package. Reliability and performance uniformity are assured by NEC’ ...
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ABSOLUTE MAXIMUM RATINGS (T Operation in excess of any one of these parameters may result in permanent damage. Parameter Symbol Drain to Source Voltage V DS Gate to Source Voltage V GSO Drain Current I D Gate Forward Current I ...
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TYPICAL CHARACTERISTICS (T A OUTPUT POWER AND POWER ADDED EFFICIENCY vs. INPUT POWER DRAIN CURRENT AND GAIN vs. INPUT POWER 200 150 100 1.5 1.0 0.5 0.0 –0 +25 ...
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TYPICAL S-PARAMETER [NE960R275] TEST CONDITIONS Dset FREQUENCY S 11 GHz MAG. ANG. (deg.) 2.0 0.89 –113 3.0 0.86 –129 4.0 0.85 –138 5.0 0.84 –140 6.0 0.81 –144 7.0 0.83 –152 8.0 0.81 –163 ...
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... TEST CONDITIONS Dset FREQUENCY S 11 GHz MAG. ANG. (deg.) 2.0 0.87 97 3.0 0.84 117 4.0 0.82 131 5.0 0.82 139 6.0 0.82 145 7.0 0.81 148 8.0 0.79 150 9.0 0.77 153 10.0 0.79 157 11.0 0.80 162 12.0 0.80 169 13.0 0.82 176 14.0 0.84 178 15.0 0.83 178 16.0 0.84 175 17.0 0.83 173 18.0 0.84 170 Caution S-parameters include bond wires. Gate : Total 2 wires, 1 per bond pad, 300 m long each wire. ...
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TEST CONDITIONS Dset FREQUENCY S 11 GHz MAG. ANG. (deg.) 2.0 0.85 92 3.0 0.80 114 4.0 0.78 128 5.0 0.77 142 6.0 0.77 143 7.0 0.76 146 8.0 0.74 149 9.0 0.74 ...
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... PACKAGE DIMENSIONS PACKAGE CODE-75 (Unit: mm) PHYSICAL DIMENSIONS NE960R200 (CHIP) (Unit: m) 880 285 80 150 80 285 D Source G 150 80 285 Remark Chip thickness : 100 Gate D : Drain Source is grounded through via hole. Gate 0.5 1.8 Drain 2.7 7.0 9.8 MAX. NE961R200 (CHIP) (Unit: 285 80 D Source G Remark Chip thickness ...
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RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. conditions other than those recommended below, contact your NEC sales representative. Soldering Method Partial Heating Pin temperature: 260 C Time: 5 seconds or less (per pin row) ...
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Preliminary Data Sheet P13775EJ2V0DS00 NE960R2 SERIES 9 ...
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Preliminary Data Sheet P13775EJ2V0DS00 NE960R2 SERIES ...
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Preliminary Data Sheet P13775EJ2V0DS00 NE960R2 SERIES 11 ...
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The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the ...