NE960R200 Renesas Electronics Corporation., NE960R200 Datasheet - Page 5

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NE960R200

Manufacturer Part Number
NE960R200
Description
0.2 W X, Ku-band Power Gaas Mes Fet
Manufacturer
Renesas Electronics Corporation.
Datasheet
[NE960R200]
FREQUENCY
TEST CONDITIONS: V
Caution S-parameters include bond wires.
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
GHz
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
Gate
Drain : Total 2 wires, 1 per bond pad, 300 m long each wire.
Source : No bond wires.
Wire
MAG.
0.87
0.84
0.82
0.82
0.82
0.81
0.79
0.77
0.79
0.80
0.80
0.82
0.84
0.83
0.84
0.83
0.84
: Total 2 wires, 1 per bond pad, 300 m long each wire.
: 25 m diameter, gold.
S
11
DS
ANG. (deg.)
= 9 V, I
117
131
139
145
148
150
153
157
162
169
176
178
178
175
173
170
97
Dset
= 90 mA
Preliminary Data Sheet P13775EJ2V0DS00
MAG.
7.60
3.84
2.98
2.46
2.10
1.85
1.57
1.45
1.33
1.23
1.17
1.13
0.95
0.83
0.78
0.74
0.59
S
21
ANG. (deg.)
166
147
135
109
104
129
165
165
137
112
82
54
29
30
56
82
1
MAG.
0.061
0.062
0.065
0.069
0.069
0.064
0.059
0.072
0.059
0.057
0.070
0.043
0.061
0.048
0.049
0.044
0.061
S
12
ANG. (deg.)
104
124
159
173
141
118
128
137
172
131
106
72
47
13
24
56
79
NE960R2 SERIES
MAG.
0.36
0.34
0.33
0.34
0.37
0.40
0.43
0.47
0.50
0.51
0.52
0.54
0.55
0.57
0.57
0.57
0.56
S
22
ANG. (deg.)
103
106
108
110
114
118
122
126
129
132
142
49
64
74
85
93
99
5

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