BFU725F-N1 NXP Semiconductors, BFU725F-N1 Datasheet
BFU725F-N1
Related parts for BFU725F-N1
BFU725F-N1 Summary of contents
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... BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 01 — 13 July 2009 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices ...
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... Description emitter base emitter collector Ordering information Package Name Description - plastic surface-mounted flat pack package; reverse pinning; 4 leads Marking Marking B7* Rev. 01 — 13 July 2009 BFU725F/N1 NPN wideband silicon germanium RF transistor Min = MHz - = amb [ amb = 2 V ...
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... T sp storage temperature junction temperature Thermal characteristics Parameter thermal resistance from junction to solder point 200 P tot (mW) 150 100 Power derating curve Rev. 01 — 13 July 2009 BFU725F/N1 Min Max - 10 - 2 136 65 +150 - 150 Conditions 001aah424 ...
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... opt f = 1.5 GHz f = 1.8 GHz f = 2.4 GHz f = 5.8 GHz GHz mA opt f = 1.5 GHz f = 1.8 GHz f = 2.4 GHz f = 5.8 GHz GHz Rev. 01 — 13 July 2009 BFU725F/N1 Min Typ Max Unit 160 280 400 - 268 - - 400 - - amb [ ...
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... FE (1) (2) (3) 350 (4) (5) (6) 300 (7) (8) (9) (10) 250 (11) 200 2.5 3.0 3.5 V (V) CE (1) V (2) V (3) V Fig 3. Rev. 01 — 13 July 2009 BFU725F/N1 Min Typ Max Unit = amb - - - - = amb - - - - 001aak272 (1) (2) ( (mA amb = ...
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... CB Fig (1) G (2) MSG (dB) (3) G MSG 10 G max Rev. 01 — 13 July 2009 BFU725F/ GHz amb Transition frequency as a function of collector current; typical values 001aah429 (4) max ( (mA) C © NXP B.V. 2009. All rights reserved. ...
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... MSG (GHz Fig 8. 001aah432 NF (dB) (1) (2) (3) (4) ( (mA) C (1) I (2) I Fig 10. Minimum noise figure as a function of Rev. 01 — 13 July 2009 BFU725F/N1 50 MSG 40 2 IS21I mA amb Gain as a function of frequency ...
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... scale 2.2 1.35 2.2 0.48 1.3 1.15 1.8 1.15 2.0 0.38 REFERENCES JEDEC JEITA Rev. 01 — 13 July 2009 BFU725F/N1 NPN wideband silicon germanium RF transistor detail 0.2 0.1 EUROPEAN PROJECTION SOT343F X ISSUE DATE 05-07-12 06-03-16 © NXP B.V. 2009. All rights reserved ...
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... Direct Current Dielectric Resonator Oscillator Low Noise Amplifier Low Noise Block Kurtz above Negative-Positive-Negative Radio Frequency Wireless Local Area Network Data sheet status Product data sheet Rev. 01 — 13 July 2009 BFU725F/N1 Change notice Supersedes - - © NXP B.V. 2009. All rights reserved ...
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... Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 13 July 2009 BFU725F/N1 © NXP B.V. 2009. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 13 July 2009 Document identifier: BFU725F_N1_1 ...