BF488 NXP Semiconductors, BF488 Datasheet - Page 3
BF488
Manufacturer Part Number
BF488
Description
Pnp High-voltage Transistor
Manufacturer
NXP Semiconductors
Datasheet
1.BF488.pdf
(6 pages)
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Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
2004 Dec 08
V
V
V
I
I
I
P
T
T
T
R
I
I
h
V
C
C
f
C
CM
BM
amb
CBO
EBO
T
SYMBOL
SYMBOL
SYMBOL
FE
stg
j
amb
CBO
CEO
EBO
tot
CEsat
th(j-a)
c
re
PNP high-voltage transistor
= 25 C unless otherwise stated.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
thermal resistance from junction to ambient
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
collector capacitance
feedback capacitance
transition frequency
PARAMETER
PARAMETER
PARAMETER
open emitter
open base
open collector
T
V
V
V
V
I
V
V
V
f = 100 MHz
C
amb
CB
CB
EB
CE
CB
CE
CE
I
I
= 20 mA; I
C
C
= 300 V; I
= 200 V; I
= 5 V; I
= 20 V
= 20 V; I
= 30 V; I
= 10 V; I
= 25 mA
= 40 mA
3
note 1
25 C; note 1
CONDITIONS
CONDITIONS
CONDITIONS
C
B
E
C
C
= 0 A
E
E
= 2 mA
= i
= i
= 10 mA;
= 0 A
= 0 A; T
e
c
= 0 A; f = 1 MHz
= 0 A; f = 1 MHz
j
= 150 C
65
65
MIN.
VALUE
150
50
20
70
MIN.
830
+150
150
+150
Product specification
350
350
5
100
200
100
MAX.
4
2.5
110
MAX.
20
20
100
0.5
BF488
UNIT
K/W
V
V
V
mA
mA
mA
mW
C
C
C
UNIT
nA
nA
V
pF
pF
MHz
UNIT
A