LBN150B01 Diodes, Inc., LBN150B01 Datasheet - Page 2

• Manufacturer Part Number: LBN150B01
• Description: 150 Ma Load Switch Featuring Complementary Bipolar Transistors
• Manufacturer: Diodes, Inc.

Maximum Ratings: Discrete PNP Transistor (Q1)
Maximum Ratings: Discrete NPN Transistor (Q2)
Electrical Characteristics: Discrete PNP Transistor (Q1)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Output Current - continuous (Note 4)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Output Current - continuous (Note 4)
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
Collector-Base Cut Off Current
Collector-Emitter Cut Off Current
Emitter-Base Cut Off Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Equivalent on-resistance
Base-Emitter Turn-on Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Notes:
DS30749 Rev. 4 - 2
4. Short duration pulse test used to minimize self-heating effect.
Characteristic
Characteristic
Characteristic
V
R
V
Symbol
V
C
V
V
V
CE(SAT)
CE(SAT)
BE(SAT)
BE(ON)
C
I
I
I
I
h
h
h
h
CBO
CEO
EBO
NF
CEX
I
h
CBO
CEO
EBO
OBO
f
t
BL
IBO
t
FE
RE
FE
OE
t
t
IE
T
d
s
r
f
www.diodes.com
Min
105
110
120
100
250
-40
-40
0.1
90
32
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-6
2
3
2 of 7
Symbol
Symbol
V
V
V
V
V
V
-0.08
-0.15
-0.92
-0.95
@T
Max
CBO
CEO
EBO
@T
CBO
CEO
EBO
-0.5
-1.1
400
225
I
I
-50
-50
-50
-50
-50
2.5
12
10
60
35
35
75
C
C
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
4
8
4
A
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
@T
x 10E-4
MHz
Unit
K Ω
μS
nA
nA
nA
nA
nA
pF
pF
dB
A
⎯
⎯
⎯
⎯
⎯
⎯
⎯
ns
ns
ns
ns
V
V
V
V
Ω
V
V
= 25°C unless otherwise specified
I
I
I
V
V
V
V
V
V
V
V
V
V
V
I
I
I
I
V
I
I
V
V
V
V
V
f =1 KHz
V
V
V
I
Value
Value
C
C
E
C
C
C
C
C
C
B1
-200
200
CE
CE
CB
CE
EB
CE
CE
CE
CE
CE
CE
CE
CB
EB
CE
CE
CE
CC
BE(OFF)
CC
-40
-40
60
40
-6
= -10μA, I
= - 10 mA, I
= -50mA, I
= -10uA, I
= -1.0mA, I
= -200mA, I
= -200mA, I
= -10mA, I
= -50mA, I
6
= I
= -1V, I
= -1V, I
= -1V, I
= -1V, I
= -5.0 V, f = 1.0 MHz, I
= -30V, V
= -30V, V
= -30V, I
= -30V, I
= -5V, I
= -1V, I
= -1V, I
= -5V, I
= -5.0 V, f = 1.0 MHz, I
= 1.0V, Ic = 10mA, f = 1.0 KHz
= -3.0 V, I
= -3.0 V, I
= - 20V, I
= - 5V, Ic = -100 uA, R
B2
= -1.0 mA
= 0.5V, I
C
C
C
C
C
C
C
C
E
C
B
B
B
E
B
Test Condition
B
= 0
= -10 mA
= -50 mA
= -100 mA
= -200 mA
= -100 μA
= -1 mA
= -200mA
EB(OFF)
EB(OFF)
= 0
= 0
B
B
B
C
= -5mA
C
C
= 0
= 0
= -1mA
= -5mA
= 0
= -1 mA
= -20mA
= -20mA
= -10mA, f = 100 MHz
= -10 mA,
= -10 mA,
B1
= -1.0 mA
= -3.0V
= -3.0V
© Diodes Incorporated
E
C
s
Unit
Unit
mA
mA
= 0
= 0
= 1Ω,
V
V
V
V
V
V
LBN150B01