LBN150B01 Diodes, Inc., LBN150B01 Datasheet - Page 3

• Manufacturer Part Number: LBN150B01
• Description: 150 Ma Load Switch Featuring Complementary Bipolar Transistors
• Manufacturer: Diodes, Inc.

Electrical Characteristics: Discrete NPN Transistor (Q2)
Typical Characteristics
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
Collector-Base Cut Off Current
Collector-Emitter Cut Off Current
Emitter-Base Cut Off Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Equivalent on-resistance
Base-Emitter Turn-on Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
DS30749 Rev. 4 - 2
350
300
250
200
150
100
50
Fig. 1 Max Power Dissipation vs Ambient Temperature
0
0
Characteristic
25
T , AMBIENT TEMPERATURE (°C)
A
50
75
100
125
V
R
V
Symbol
V
C
V
V
V
CE(SAT)
CE(SAT)
BE(SAT)
BE(ON)
C
I
I
I
I
h
h
h
h
CBO
CEO
EBO
NF
CEX
I
h
CBO
CEO
EBO
OBO
f
t
BL
IBO
FE
RE
FE
OE
t
IE
T
d
r
150
175
www.diodes.com
Min
150
170
160
100
250
0.1
60
40
70
30
12
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
6
2
3
3 of 7
Max
0.08
0.16
0.36
0.98
0.95
400
1.8
1.1
50
50
50
50
50
12
10
60
35
35
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
4
8
4
1,000
100
10
1
0.1
@T
x 10E-4
V , COLLECTOR EMITTER CURRENT (V)
MHz
CE
Unit
K Ω
μS
nA
nA
nA
nA
nA
pF
pF
dB
⎯
⎯
⎯
⎯
⎯
⎯
⎯
ns
ns
A
V
V
V
V
Ω
V
V
= 25°C unless otherwise specified
Fig. 2 Safe Operating Area
I
I
I
V
V
V
V
V
V
V
V
V
V
V
I
I
I
I
V
I
I
V
V
V
V
V
f =1 KHz
V
V
C
C
E
C
C
C
C
C
C
1
CE
CE
CB
CE
EB
CE
CE
CE
CE
CE
CE
CE
CB
EB
CE
CE
CE
CC
BE(OFF)
= 10μA, I
= 10 mA, I
= 50mA, I
= 10uA, I
= 1.0mA, I
= 200mA, I
= 200mA, I
= 10mA, I
= 50mA, I
= 1V, I
= 1V, I
= 1V, I
= 1V, I
= 5.0 V, f = 1.0 MHz, I
= 30V, V
= 30V, V
= 30V, I
= 30V, I
= 5V, I
= 1V, I
= 1V, I
= 5V, I
= 5.0 V, f = 1.0 MHz, I
= 1.0V, Ic = 10mA, f = 1.0 KHz
= -3.0 V, I
= 20V, I
= 5V, Ic = 100 uA, R
= 0.5V, I
C
C
C
C
C
C
C
C
C
E
B
B
B
E
B
B
B
= 0
= 100 μA
= 1 mA
= 10 mA
= 50 mA
= 100 mA
= 200 mA
= 200mA
C
EB(OFF)
EB(OFF)
= 0
= 0
B
B
Test Condition
= 5mA
= 1mA
= 5mA
= 0
= 0
= 1 mA
C
= 0
= 0mA, f = 100 MHz
= 20mA
= 20mA
= 10 mA,
10
B1
= 1.0 mA
= 3.0V
= 3.0V
s
E
C
© Diodes Incorporated
= 1Ω,
= 0
= 0
LBN150B01
100